2013
DOI: 10.4028/www.scientific.net/msf.740-742.1056
|View full text |Cite
|
Sign up to set email alerts
|

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching

Abstract: 400V/2.5A 4H-SiC JFETs, having a reduced surface field (RESURF) structure have been fabricated. Measurements on the on-resistance, blocking, and switching characteristics were carried out. It was confirmed that the JFET has fast switching characteristics. A demonstration of a Pulse Width Modulation (PWM) decoder using JFETs was carried out. The input waveform, which is pulse width modulated 20.5MHz at 4.1MHz sine wave, as able to be decoded at 4.1MHz sine wave.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…Thanks to its excellent electrical properties at high temperatures and frequencies, SiC is very attractive for high power devices. [1][2][3] To exploit these properties, it is essential to form a Ohmic contact on the SiC, and Ni is a good material for such contact. Ni-Si silicides formed by annealing treatments have been used to avoid the increase in resistance associated with reduced polysilicon line-widths and film thicknesses.…”
Section: Introductionmentioning
confidence: 99%
“…Thanks to its excellent electrical properties at high temperatures and frequencies, SiC is very attractive for high power devices. [1][2][3] To exploit these properties, it is essential to form a Ohmic contact on the SiC, and Ni is a good material for such contact. Ni-Si silicides formed by annealing treatments have been used to avoid the increase in resistance associated with reduced polysilicon line-widths and film thicknesses.…”
Section: Introductionmentioning
confidence: 99%