Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

Abstract

We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described by using six coupled equations for the average displacement, its mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectric coefficient, its fluctuation and correlation with density fluctuations of charged defects.Coupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equations of Landau-Khalatnikov type, which describe the homogeneous reversal with sharp pyroelectric coefficient peaks near the thermodynamic coercive field values. Our approach explains pyroelectric loops observed in Pb(Zr,Ti)O 3 film.

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers

“…Metal–ferroelectric–semiconductor (MFS) structures have been continuously investigated for various applications, such as nonvolatile memories, sensors, and solar cells. − The outstanding properties in the semiconductor/ferroelectric bilayers stem from the polarization coupling between the nonswitchable polarization in semiconductor and the switchable polarization in the ferroelectric layer. However, the poor quality of interface at the ferroelectric–semiconductor junction in Si-based MFS structures degrades the charge coupling effect and thus limited the memory/photovoltaic performance .…”