Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium

Bourret-Courchesne, Edith; Ye, Q.; Peters, David W.; Arnold, John; Ahmed, M.U.; Irvine, S.J.C.; Kanjolia, Ravi; Smith, Lynn; Rushworth, S.

doi:10.1016/s0022-0248(00)00398-5

Cited by 40 publications

(28 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Immediate establishment of lateral overgrowth between the islands makes the interlayer efficient at bending over most of the threading dislocations. At 800˚C, the precursors used in this study are fully decomposed 19 however, the islands nucleated at this temperature are Ga-rich with a metallic appearance. The process presented here is independent of the substrate used.…”

Section: Discussionmentioning

confidence: 99%

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Bourret-Courchesne

Benamara

et al. 2001

Journal of Elec Materi

View full text Add to dashboard Cite

Abstract:A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the initial growth at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are identical to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

show abstract

Section: Discussionmentioning

confidence: 99%

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Bourret-Courchesne

Benamara

et al. 2001

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…Note that the DMHy could be completely decomposed in this low-temperature range. 8,9 The flow rates of TMG and DMHy were 32 lmol/min and 900 lmol/min, with the V/III ratio of around 28 during the regrowth, respectively. The background pressure was maintained at 8 kPa.…”

Section: Methodsmentioning

confidence: 99%

“…8,9 DMHy starts pyrolitic decomposition at 320°C and is completely decomposed over 800°C, 9 while only 15% of ammonia is decomposed even at 950°C. 10 Recently, the LEG on a stripe-patterned GaN template employing DMHy was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor

Takizawa

Shimizu

Ueda

2007

Journal of Elec Materi

View full text Add to dashboard Cite

Lateral epitaxial growth (LEG) is a key technology to improve the lifetime of III-V nitride-based laser diodes (LDs) by reducing the dislocation density in the materials. To increase the area of low dislocation density, the lateral growth rate needs to be increased. In addition, suppression of the vertical growth is strongly desired to avoid unnecessarily thick growth, which would result in cracks in the epitaxial film. This paper reports the maskless LEG of GaN with extremely high lateral-to-vertical growth rate ratio using dimethylhydrazine as a nitrogen precursor. The lateral growth only occurs from the sidewalls of the etched mesa stripes without any dielectric masks. The lateral growth rate toward the <11 " 20> direction is extremely high, as high as 10 lm/h, while no vertical growth is observed on the top of unmasked mesa. The cross-sectional transmission electron microscopic image shows that the threading dislocations in the wing region extend only toward the lateral <11 "20> direction. Note that almost smooth coalescence between the wing regions is confirmed by atomic force microscopy. X-ray diffraction measurements reveal that this maskless LEG drastically improves the crystallographic twist down to 97 arc-s, which is as comparably low as that of a free-standing GaN substrate. The presented maskless LEG is advantageous for optical device applications.

show abstract

“…This study can be-for simplicity-done for In-free films, as we already excluded TMIn to be the source of C. UDMHy decomposes by breakage of the N-N bond [22] and is still not fully decomposed at the temperatures used. The NH 2 part of the molecule is consumed for N incorporation, while the dimethylamine radical should not be incorporated, it however might also decompose in what results as the formation of CH 3 radicals [22], which could certainly be a source of C. The decomposition of the dimethylamine radical starts only at temperatures above 500 1C. Hence, we should observe a strong decrease of the C content with dropping growth temperature if the UDMHy would be the source of the C.…”

Section: Article In Pressmentioning

confidence: 99%

Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance

Volz

Torunski

Kunert

et al. 2004

Journal of Crystal Growth

View full text Add to dashboard Cite

Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium

Cited by 40 publications

References 29 publications

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

Maskless Lateral Epitaxial Growth of Gallium Nitride Using Dimethylhydrazine as a Nitrogen Precursor

Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance

Contact Info

Product

Resources

About