PZT thin films for microsensors and actuators: Where do we stand?

Muralt, Paul

doi:10.1109/58.852073

Cited by 347 publications

(222 citation statements)

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“…Owing to the clamping effect imposed by the substrates, the piezoelectric coefficients in doped BNBT thin films are much lower than their bulk values ͑ϳ160 pC/ N͒. However, the observed d 33,f value for BNETLace film is very much comparable to those of the lead-based counterparts ͑d 33,f = 10-110 pm/ V for typical PZT thin films 26 ͒ and one of the highest reported values for lead-free piezoelectric thin films up to this date. In addition, we believe the ferroelectric and piezoelectric properties of these BNBT-based thin films can be further enhanced through judicious control of doping level, as the MPB and optimal doping concentration in thin film forms might be slightly different from those of bulks.…”

mentioning

confidence: 88%

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Wang

Chan

et al. 2010

Applied Physics Letters

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Doping effects with respect to the electrical properties of morphotropic phase boundary ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 thin films epitaxially grown on CaRuO 3 electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑001͒ substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+ Ce codoped films with a remanent polarization P r of 29.5 C / cm 2 and a remanent piezoelectric coefficient d 33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect. © 2010 American Institute of Physics. ͓doi:10.1063/1.3518484͔Due to the increasing environmental and biological concerns on high toxicity of lead present in the widely used Pb͑Zr, Ti͒O 3 ͑PZT͒ family, considerable attention has been drawn to develop lead-free ferroelectric materials in the past two decades. 1 Among various potential lead-free piezoelectric ceramics, A-site complex perovskite ͑Bi 0.5 Na 0.5 ͒TiO 3 ͑BNT͒ is considered to be one of the strong candidates because of its marked ferroelectricity/piezoelectricity. 2,3 The pioneer work by Takenaka et al. 4 demonstrated that rhombohedral ͑F ␣ ͒-tetragonal ͑F ␤ ͒ morphotropic phase boundary ͑MPB͒ in ͑Bi 0.5 Na 0.5 ͒TiO 3 -BaTiO 3 ͑BNBT͒ binary system is remarkably effective in promoting piezoelectric properties. Subsequent studies revealed the piezoelectric performance of BNBT ceramics with MPB composition could be further enhanced by appropriate dopants. [5][6][7] In spite of the numerous studies on BNT-based single crystals and ceramics, literature tackling with the growth and characterization of BNT-based, especially BNBT-based thin films, still remains at an infancy stage. [8][9][10][11][12] Consequently, doping effects on the electrical properties of thin film BNBT materials are still unclear. Abazari et al. 13 has recently reported epitaxial potassium modified BNBT thin films grown on SrRuO 3 coated SrTiO 3 substrates by pulsed laser deposition ͑PLD͒. Dielectric and piezoelectric properties of the films were evaluated macroscopically. However, the nanoscale characterization of piezoresponse of doped BNBT thin films is still missing. In this letter, thin films of La+ Ce codoped and Mn-doped BNBT with composition in the vicinity of MPB are epitaxially deposited on CaRuO 3 ͑CRO͒ electroded ͑LaAlO 3 ͒ 0.3 ͑Sr 2 AlTaO 6 ͒ 0.35 ͑LSAT͒ ͑001͒ singlecrystal substrates by PLD. Effects of dopants on ferroelectric, dielectric, leakage current, and local piezoelectric properties of the BNBT-based thin films are investigated.The 10% Bi-enriched targets of ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % CeO 2 + 0.5 mol % La 2 O 3 ͑BNBT-LaCe͒, ͑Bi 0.5 Na 0.5 ͒ 0.94 Ba 0.06 TiO 3 + 0.5 mol % MnO 2 ͑BN-BTMn͒ used for laser ablation were fabricated by the conventional solid state reaction route. The substrates were cubic ͑001͒-oriented LSAT ͑a = 3.868 Å͒, which were first coated a layer of CRO ͑ϳ40 nm͒ by PLD...

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confidence: 88%

Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 thin films

Wang

Chan

et al. 2010

Applied Physics Letters

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“…, t seq can be obtained from equation (24) as (25) Substituting equation (25) and (21) into equation (20) gives the charge sensitivity (S d ) as (26) where F is the applied force N/m at 1 g and S d is the charge sensitivity in C/g.…”

Section: Frequency Response Analysismentioning

confidence: 99%

“…Then, (19) where t p is the thickness of the piezoelectric layer. Substitution of equation (19) into (18) and solving it leads to: (20) where φ is the slope of the deflection of the beam (deformation). Based on equation (5), φ can be written as (21) and t seq is the effective thickness of the composite beam.…”

Section: Frequency Response Analysismentioning

confidence: 99%

“…The aim of this work is to develop guidelines for the design and manufacture of piezoelectric accelerometers for structural health monitoring. Active materials with larger piezoelectric constants, such as Lead ZirconateTitanate (PZT), can widen the performance gap of piezoelectric accelerometers [11,[18][19][20][21][22][23][24][25][26][27]. Zinc Oxide (ZnO) has also been employed for active piezoelectric film due to its relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce largearea films without pinholes, and proven compatibility with IC (integrated circuit) integration [28][29][30].…”

Section: E T E T E E T T T T T T D E T E Tmentioning

confidence: 99%

“…The first component in equation (27) can be written as (20) where φ is the slope of the deflection of the beam (deformation). Based on equation (5), φ can be written as (21) and t seq is the effective thickness of the composite beam.…”

Section: Frequency Response Analysismentioning

confidence: 99%

See 2 more Smart Citations

A Simple Analytical Model for MEMS Cantilever Beam Piezoelectric Accelerometer and High Sensitivity Design for SHM (structural health monitoring) Applications

Raaja¹,

Rathnasami²,

Sumangala³

2017

Transactions on Electrical and Electronic Materials

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Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

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