Q‐switched mode‐locked Nd:GGG laser with MoS₂–SnSe₂ heterojunction nanosheets

Abstract

In this paper, we used the liquid phase stripping method to manufacture MoS2–SnSe2 heterojunction saturable absorber (SA). The scanning electron microscope, the atomic force microscope, and the Raman spectrometer were used to characterize the MoS2–SnSe2 heterojunction SA. The Q‐switched mode‐locked (QSML) Nd:GGG laser with MoS2–SnSe2 heterojunction SA was presented. The maximum output power of the QSML Nd:GGG laser was 236.4 mW with a repetition rate of 83.3 MHz and pulse width of 447 ps. In short, the MoS2–SnSe2 heterojunction nanosheets present excellent saturable absorption characteristics.