We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to be electronically two-dimensional (2D). There are some interesting findings about Td-MoTe2: (1) A scaling approach εθ=(sin 2 θ+γ -2 cos 2 θ) 1/2 is applied, where θ is the magnetic field angle with respect to the c axis of the crystal and γ is the mass anisotropy. Unexpectedly, the electronically 3D character with γ as low as 1.9 is observed in Td-MoTe2; (2) The possible Lifshitz transition and the following electronic structure change can be verified around T~150 K and T~60 K, which is supported by the evidence of the slop changing of the temperature dependence of TEP, the carrier density extracted from Hall resistivity and the onset temperature of γ obtained from the MR measurements. The extremely large MR effect in Td-MoTe2 could originate from the combination of the electron-hole compensation and a particular orbital texture on the electron pocket, which is supported by the calculations of electronic structure. Our results may provide a general scaling relation for the anisotropic MR and help to recognize the origins of the MR effect in other systems, such as the Weyl semimetals and the Dirac ones.