Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

Abstract

Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growth