Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy

Jung, Lena; Pries, Julian; Maß, Tobias W. W.; Lewin, Martin; Boyuk, Dmitriy S.; Mohabir, Amar; Filler, Michael A.; Taubner, Thomas

doi:10.1021/acsphotonics.9b00466

Cited by 29 publications

(20 citation statements)

References 76 publications

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“…Additionally, even ultra-thin surface layers with a thickness below 5 nm can significantly influence the s-SNOM contrast beyond mere dielectric screening if they exhibit resonant behavior in the spectral region of interest. This exceptional surface sensitivity was previously shown for phonon resonances of the native oxide on doped silicon nanowires, [29] and therefore has to be implemented for a quantitative analysis.…”

Section: Influence Of the Lao Thickness On The Near-field Responsementioning

confidence: 68%

Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures

Barnett

Rose

Ulrich

et al. 2020

Adv Funct Materials

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In the family of functional oxide materials, the interface between LaAlO 3 and SrTiO 3 (LAO/STO) is an interesting example, as both materials are largebandgap insulators in their bulk state but give rise to a confined 2D electron gas (2DEG) when combined through thin-film deposition. While this 2DEG exhibits remarkable properties, its experimental investigation is mostly limited to destructive or non-local (i.e. averaging over larger areas) methods until recently. Scanning near-field optical microscopy is shown to overcome this limitation, detecting buried 2DEGs by using highly confined optical nearfields. Here, a full spectroscopic approach with phonon-enhancement and simulations based on the finite dipole model is combined to extract quantitative electronic properties of the interfacial LAO/STO 2DEG. This threefold improvement compared to previous work will enable the quantitative nanoscale, non-destructive, sub-surface analysis of complex oxide thin films and interfaces, as well as similar heterostructures.

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Section: Influence Of the Lao Thickness On The Near-field Responsementioning

confidence: 68%

Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures

Barnett

Rose

Ulrich

et al. 2020

Adv Funct Materials

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“…This so far unknown aspect might offer additional adjustment possibilities for future material engineering. Furthermore, it was shown that quantitative investigations of vertical material compositions are possible using s-SNOM measurements (60,61). Comparing multilayered finite dipole models with experimental tomographic s-SNOM data will allow to study, e.g., the local hydrogenation depth in our Mg/ MgH 2 films.…”

Section: Resultsmentioning

confidence: 99%

Watching in situ the hydrogen diffusion dynamics in magnesium on the nanoscale

et al. 2020

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Active plasmonic and nanophotonic systems require switchable materials with extreme material contrast, short switching times, and negligible degradation. On the quest for these supreme properties, an in-depth understanding of the nanoscopic processes is essential. Here, we unravel the nanoscopic details of the phase transition dynamics of metallic magnesium (Mg) to dielectric magnesium hydride (MgH2) using free-standing films for in situ nanoimaging. A characteristic MgH2 phonon resonance is used to achieve unprecedented chemical specificity between the material states. Our results reveal that the hydride phase nucleates at grain boundaries, from where the hydrogenation progresses into the adjoining nanocrystallites. We measure a much faster nanoscopic hydride phase propagation in comparison to the macroscopic propagation dynamics. Our innovative method offers an engineering strategy to overcome the hitherto limited diffusion coefficients and has substantial impact on the further design, development, and analysis of switchable phase transition as well as hydrogen storage and generation materials.

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“…[ 31,32 ] The IR amplitude and phase spectra of the InAs ZB nanowire in Figure 3a exhibit a broad plasmonic response. A Drude model [ 21,33–37 ] is applied to successfully fit the spectral data of the InAs ZB nanowire whose electron concentration is 2.37 × 10 19 cm −3 (solid lines in Figure 3a). Figure 3b shows the IR amplitude and phase spectra of an InAs ribbon whose electron concentration is 1.92 × 10 19 cm −3 .…”

Section: Figurementioning

confidence: 99%

Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

Xue

Huang

et al. 2020

Advanced Materials

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One is the interface roughness that is very challenging to control in crystal growth procedure, [5] and the other one is the lattice matching condition that restricts combinations of materials. Recently, quantum wells made by stacking 2D materials, with atomically smooth interfaces and latticematching free combination, yield extraordinary inter-sub-band transitions. [6,7] In III-V semiconductor, randomly occurring twin boundaries and crystal phase mixing are commonly observed and lead to localization and formation of energy barriers due to the type-II band alignment between zinc blende (ZB) and wurtzite phases. [8-12] Periodically spaced twin boundaries form twinning superlattice (TSL), [13] whose electronic band structure modifies due to the added periodicity by the twin boundaries. [14,15] The electronic properties of the semiconductor TSL sensitively bond with geometrical parameters of the TSL structure. Therefore, regulating the recurrence and configuration of twin boundaries leads to the generation of unique versatile minibands. [14-16] In principle, the semiconductor TSL exhibits comparable optoelectronic properties offered by the heterostructure superlattice. Although semiconductor TSL nanowires have many promising applications such as thermoelectric devices and nanocircuit elements.

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Quantification of Carrier Density Gradients along Axially Doped Silicon Nanowires Using Infrared Nanoscopy

Cited by 29 publications

References 76 publications

Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures

Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures

Watching in situ the hydrogen diffusion dynamics in magnesium on the nanoscale

Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

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