2008
DOI: 10.1063/1.2988145
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Quantification of self-sputtering and implantation during pulsed laser deposition of gold

Abstract: This work reports on the quantification of self-sputtering and implantation occurring during pulsed laser deposition of Au as a function of the laser fluence used to ablate the gold target. The experimental approach includes, on one hand, in situ electrical ͑Langmuir͒ and optical ͑two-dimensional imaging͒ probes for determining, respectively, ion and excited neutral kinetic energy distributions. On the other hand, it includes determination of the density of ͑i͒ ions reaching a substrate, and ͑ii͒ gold atoms de… Show more

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Cited by 26 publications
(29 citation statements)
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“…Ions are the species in the laser induced plasma having the higher kinetic energies, [9][10][11] and considered responsible for sputtering or implantation at substrate level during pulsed laser deposition. 4,6,7 The ionization fraction is determined by the fluence and wavelength of the laser used for ablation.…”
Section: Introductionmentioning
confidence: 99%
“…Ions are the species in the laser induced plasma having the higher kinetic energies, [9][10][11] and considered responsible for sputtering or implantation at substrate level during pulsed laser deposition. 4,6,7 The ionization fraction is determined by the fluence and wavelength of the laser used for ablation.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, more than half of the high flux refers to charged species bombarding the substrate with enough ions having energies well above 200 eV. 21 It is interesting to point out here that the charge emitted during electron-beam deposition of gold generated surface defects that acted as preferred nucleation sites for gold, 17 even when the flux was 3 orders of magnitude smaller than in the present work. Also, the use of ion beam deposition leads to intermediate values of the number density and thus an enhanced nucleation rate.…”
Section: Discussionmentioning
confidence: 55%
“…20͒ and that this average time varies little with fluence. 21 Assuming 10 s as a conservative approximation for the deposition time in our conditions as was earlier done in Ref. 8, the average flux calculated dividing the number of deposited atoms per pulse by this deposition time is in the range of 0.…”
Section: Discussionmentioning
confidence: 99%
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“…These differences can be explained in relation to the nucleation processes of the laser ablated species that take place on the substrate. In fact, it has been proposed 14,28,29 that defects created during layer growth by the high energetic plasma species reaching the substrate are responsible of the nucleation process. At the initial state of deposition, the dominating island-like growth results in small coverage of the surface area by clusters.…”
Section: Discussionmentioning
confidence: 99%