2016
DOI: 10.1002/pssa.201600335
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Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Abstract: Phone: þ61 2 612 555 38, Fax: +61 2 6125 0506 Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm À2 -100 kW cm À2 . Calibra… Show more

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Cited by 10 publications
(7 citation statements)
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“…Luminescence spectroscopy has been demonstrated to be a powerful technique to investigate optoelectronic properties of various structures in crystalline silicon (c-Si) solar cells. Band-to-band photoluminescence (PL) spectra from c-Si have been used to extract fundamental parameters of the material such as the band-to-band absorption coefficient, the radiative recombination coefficient, ,, temperature and doping dependencies , of the c-Si bandgap, dopant concentrations, , diffusion lengths of minority carriers in c-Si wafers , and bricks, as well as the light trapping capability of various plasmonic structures . Moreover, sub-bandgap PL spectra have been employed to investigate the nature of various defects in c-Si wafers, such as dislocations, metal precipitates, oxygen precipitates, or laser-induced defects. , In addition, some deposited thin films acting as both surface passivation and antireflection coating layers have also been demonstrated to emit strong PL signals at low temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Luminescence spectroscopy has been demonstrated to be a powerful technique to investigate optoelectronic properties of various structures in crystalline silicon (c-Si) solar cells. Band-to-band photoluminescence (PL) spectra from c-Si have been used to extract fundamental parameters of the material such as the band-to-band absorption coefficient, the radiative recombination coefficient, ,, temperature and doping dependencies , of the c-Si bandgap, dopant concentrations, , diffusion lengths of minority carriers in c-Si wafers , and bricks, as well as the light trapping capability of various plasmonic structures . Moreover, sub-bandgap PL spectra have been employed to investigate the nature of various defects in c-Si wafers, such as dislocations, metal precipitates, oxygen precipitates, or laser-induced defects. , In addition, some deposited thin films acting as both surface passivation and antireflection coating layers have also been demonstrated to emit strong PL signals at low temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…A notable feature is that at low temperatures their spectra are much broader than those of c‐Si. In Figure , the full width at half maximum (FWHM) of the spectra is ≈150 meV, whereas that of c‐Si is ≈25 meV at 80 K . This broadening stems from the fact that the PL spectra from a‐Si:H and SiN are reported to be emitted by the carriers trapped at band‐tail states at the band edges, resulting in a relatively broad range of energies, rather than being emitted from the two sharp band edges, as is the case for c‐Si.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the shape and intensity of the emitted spectrum have direct relationships with the electrical and optical properties and thickness of the material. Many authors have utilized these relationships to extract fundamental properties of c‐Si such as the bandgap, absorption coefficient and radiative recombination coefficient, diffusion lengths of minority carriers, or doping density …”
Section: Introductionmentioning
confidence: 99%
“…In this work, the spectra measured on samples with different doping concentrations were modelled based on a PL curve that was measured on a lightly doped silicon wafer ( N A < 1 × 10 15 cm −3 ) which has minimum influence from the dopants at liquid nitrogen temperature . Note that no model was applied to the mentioned PL spectra although in principle it can be modelled with the Maxwell‐Boltzmann distribution .…”
Section: Resultsmentioning
confidence: 99%