Metal-halide perovskites exhibit high efficiencies in photovoltaic applications and low recombination rates, despite the high concentrations of intrinsic defects. We here study the hole trapping at the negative iodine interstitial, which corresponds to the dominating recombination center in CH 3 NH 3 PbI 3 . We calculate the free energy profile for the hole trapping at 300 K using the Blue Moon technique based on hybrid functional molecular dynamics. We find that the hole trapping is energetically unfavorable and requires overcoming an energy barrier. This behavior stems from the position of the vertical (−/0) transition level of the iodine defect and the formation of a polaron. Our simulations show that the polaron does not interact with the iodine interstitial and hops through the lattice on a sub-picosecond scale. Our results highlight a mechanism by which the low mononuclear (trap-assisted) recombination rates in CH 3 NH 3 PbI 3 can be explained.Metal-halide perovskites, such as methylammonium lead iodide (CH 3 NH 3 PbI 3 ), have emerged as promising materials for high efficiency solar cells. 1-3 One of the main reasons for the outstanding performance of devices based on halide perovskites, is the slow recombination of photogenerated carriers 4-6 . It has been shown that the recombination rates measured in CH 3 NH 3 PbI 3 are dominated by the bimolecular recombination process. 7-9 The very low monomolecular (trap-assisted) recombination rate is surprising, considering that perovskites are generally processed at low temperature, 10-12 which would suggest high concentrations of intrinsic defects. Additionally, using advanced hybrid functional calculations including spin-orbit coupling effects, Du 13 showed that iodine-related defects in CH 3 NH 3 PbI 3 , such as iodine interstitials, introduce deep hole and electron trapping levels inside the band gap and should play a role in carrier trapping and recombination.To understand the low recombination rates at iodine interstitials in CH 3 NH 3 PbI 3 , it is necessary to determine their dominating charge state. Experimental studies indicate that single-crystalline samples of CH 3 NH 3 PbI 3 are intrinsic or slightly p-doped, 14 while n-doping is observed in thin films near the surface. 15 According to computational studies, 13,16 the iodine interstitial should be stable in a negative charge state in intrinsic, n-doped and slightly p-doped CH 3 NH 3 PbI 3 samples. Stability of I − i can be expected for a wide range of Fermi levels, since such a defect corresponds to simply adding an iodine anion in its formal −1 charge state to the lattice. Meggiolaro et al. 16 found that the Fermi level is pinned close to the middle of the band gap in stoichiometric sam-ples. These findings indicate that the negative charge state of the iodine interstitial should be the dominant one in CH 3 NH 3 PbI 3 samples. However, the low recombination rate at this defect state still remains to be clarified. One possible explanation for the low recombination rates at the negatively charged iodin...