2015
DOI: 10.1103/physrevb.91.134410
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Quantifying the deleterious role of strong correlations inLa1xCaxMnO3at the magnetocaloric transition

Abstract: Here we study orthorhombic La 1−x Ca x MnO 3 (LCMO) where x = 0.2, 0.25, and 0.3 measuring the magnetization, the magneto-Seebeck, and magnetovolume contraction as a function of temperature and magnetic field to examine the influence of lattice, spin, and electronic degrees of freedom. Making the assumption that these contributions are independent of each other allows us to isolate the purely magnetic contribution to the total entropy change. This is compared directly with the value predicted from a mean-field… Show more

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Cited by 11 publications
(4 citation statements)
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References 33 publications
(54 reference statements)
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“…The difference obtained in Seebeck coefficients of both structures at 200 K was |𝑆 𝐷 𝑂(𝐼) − 𝑆 𝐷 𝑀 | ≈ 6 µV/K, which is in agreement with the experimental result that is in between ~ 6 and 7 µV/K [14]. Additionally, the electronic entropy change can be estimated from [26]:…”
Section: Electronic Band Structuresupporting
confidence: 87%
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“…The difference obtained in Seebeck coefficients of both structures at 200 K was |𝑆 𝐷 𝑂(𝐼) − 𝑆 𝐷 𝑀 | ≈ 6 µV/K, which is in agreement with the experimental result that is in between ~ 6 and 7 µV/K [14]. Additionally, the electronic entropy change can be estimated from [26]:…”
Section: Electronic Band Structuresupporting
confidence: 87%
“…, which is in agreement with the experimental result that is in between $6 and 7 mV K À1 [14]. Additionally, the electronic entropy change can be estimated from [26]…”
supporting
confidence: 90%
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“…Manganite perovskite films are attractive materials due to their colossal magnetoresistance (CMR) effect, excellent magnetic-field-dependent rectifying characteristics and resulting potential applications. [1][2][3] In manganite, the strong magnetic-conductive coupling [4] and order-disorder transition of the spin, orbital, and charge degree of freedom [5] are severely depressed at a junction by strong interface/surface effect. Thus, the interfacial behavior has an important influence on the properties of thin-film heterojunctions and related devices.…”
Section: Introductionmentioning
confidence: 99%