Quantitative analysis of low alloy steels by secondary ion mass spectrometry

Morgan, A. E.; Werner, H. W.

doi:10.1021/ac60368a020

Cited by 117 publications

(27 citation statements)

References 37 publications

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“…Sparrow76 has proposed a formula for determining the relative ion yield of compounds. His considerations, which are in good agreement with the work of Morgan and Werner,6 an atom to be emitted from the sample, ionized, and then detected, chemical bonds must be broken; the atom M must be ionized (ionization energy EM) and emitted. The ion yield is assumed to depend exponentially on the ionization potential; the ionic bond strength is assumed to be represented by x, the electronegativity of the element; the number of bonds n involved is put equal to the valence state of the atom:…”

Section: ( 5 ) Other Modelssupporting

confidence: 73%

Quantitative secondary ion mass spectrometry: A review

Werner

1980

Surface & Interface Analysis

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124

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Quantitative analysis in general aims at determining the value of a selected physical or chemical property of a given sample. With SIMS, in particular, the parameters to be determined are the concentration of a given element and also its distribution, both in depth and along the surface. Every measurement is affected by a given overall uncertainty due to statistical fluctuations in the measured signal and to systematic errors related to the experimental conditions. A discussion is devoted to the experimental conditions which influence the reproducibility of the measured signal and give rise to systematic errors, e.g. charging effects, matrix effects, selective sputtering and mass-dependent transmission, etc. The various methods used to derive the desired elemental concentration and its distribution in the sample from the raw measured data are evaluated, namely the use of calibration curves, relative sensitivity factors, fitting parameter methods and first-principle methods. Finally, the question is considered of how representative is the value determined from the (usually small) volume with respect to the composition of the bulk of the sample (sampling error).

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Section: ( 5 ) Other Modelssupporting

confidence: 73%

Quantitative secondary ion mass spectrometry: A review

Werner

1980

Surface & Interface Analysis

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124

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“…(Sn/Ni) Cu is 2/1 and (Sn/Ni)SS is N6/1. Since SIMS data derived from an Ar+ beam are not quantitative with present theories (20)(21)(22), the aIMS depth profiles indicate only relative depth, chemical compounds, and approximate concentrations. Figures 1 and 2 also show a hydrocarbon signal.…”

Section: Discussionmentioning

confidence: 89%

Analysis of SnNi Electroplate by Secondary Ion Mass Spectrometry, Ion Scattering Spectrometry, and Rutherford Backscattering

Schubert¹

1978

J. Electrochem. Soc.

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Two batches of SnNi electroplate, expected to be composed of equal atomic amounts of Sn and Ni, have been examined by secondary ion mass spectrometry, ion scattering spectrometry, and Rutherford backscattering. Tin oxides and hydroxides were found in the surface region, which is Sn-rich; no Ni oxides or hydroxides were seen. The Sn/Ni ratio for the two batches was 45/55 and 52/48 a/o. After Ar+-sputter cleaning, films of the type which occur during and immediately after electroplating could not be reproduced in 10 .8 Torr O3. The regenerated films contained substantial amounts of nickel oxides and hydroxides.Electroplated metastable SnNi is of technological interest for a broad range of metallic coating applications. It is suitable as a decorative coating and as a protective corrosion barrier (1). Usage as one of the electroplated components of electrical components has also been proposed (2). Its main attractive feature is that surface films on electroplated SnNi form rapidly in air or most aqueous solutions and exhibit a high degree of passivity to further corrosion (3-5). In order to understand the nature of these films, a detailed analysis is important.With reasonable care during electroplating, the deposit is expected to have equiatomic composition (3), although a broad range of compositions can be plated (6). Current knowledge of the surface film composition has been obtained through Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and passivation potential curves. AES studies show the surface to be a tin-rich oxide (7) or a nickel polystannate (8). These two results are not in conflict since AES does not detect hydrogen nor chemical bonding in general. The ESCA study has reached a similar conclusion (9). Passivation-potential techniques indicate that the surface is nickel stannate (3, 4), however, with films that are only tens of angstroms thick (7,9), electrochemical techniques are not sufficient to give an unambiguous analysis. This paper describes the surface analysis of SnNi electroplate by three techniques; Rutherford backscattering (RBS), ion-scattering spectrometry (ISS), and secondary ion mass spectrometry (SIMS). ExperimentalThe SIMS experiments were carried out in a stainless steel ion pumped UHV system. These included molecular composition depth profiles and film regeneration with 02 exposure. A 2 keV focused Ar + ion source with variable current density has been de-

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“…Useful ion yields can be approximated using semitheoretical techniques, [12][13][14][15][16] but they are most accurately determined using homogeneous bulk standards or ion implanted standards 17 -2 0 fabricated from the same matrix as the unknown sample.…”

Section: Distribution Statement (Of This Report)mentioning

confidence: 99%

Distribution Analysis of Major and Trace Elements Through Semiconductor Layers of Changing Matrix Using SIMS.

Galuska¹,

Morrison²

1986

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Quantitative analysis of low alloy steels by secondary ion mass spectrometry

Cited by 117 publications

References 37 publications

Quantitative secondary ion mass spectrometry: A review

Quantitative secondary ion mass spectrometry: A review

Analysis of SnNi Electroplate by Secondary Ion Mass Spectrometry, Ion Scattering Spectrometry, and Rutherford Backscattering

Distribution Analysis of Major and Trace Elements Through Semiconductor Layers of Changing Matrix Using SIMS.

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