Quantitative analysis of silicon-oxynitride films by EPMA

Dreer, Sabine; Wilhartitz, P.; Mersdorf, Edgar; Friedbacher, Gernot

doi:10.1007/bf01242917

Cited by 6 publications

(7 citation statements)

References 52 publications

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“…The EPMA instrument used for [34,81,118,119] was an ARL SEMQ equipped with the Voyager II X-ray Quantitative Microanalysis 2100/2110 EDX system from Noran instruments. The detector used was a SiLi detector with a Norvar window, which allows analysis of light elements down to boron.…”

Section: Electron Probe Microanalysismentioning

confidence: 99%

“…An area of 40 × 40 µm 2 was scanned with high frequency for each measurement. It is shown in [118,119], that EDS-EPMA is a fast and reliable analytical method for the quantitative analysis of homogeneous oxynitride films, if an appropriate standardization procedure is applied. The main feature is the calibration of the instrument, which can be used for all compositions, independent of the surface morphology of the samples, and without recalibration unless the accelerating voltage is changed.…”

Section: Electron Probe Microanalysismentioning

confidence: 99%

“…Also the thickness of the samples was calculated assuming an atomic density of 6.6 × 10 22 at/cm 3 . Since too many assumptions were necessary for the quantification of these measurements and the high standard deviation was high, the results were only taken as tentative values for comparison in [118], but they were not used for any calibration.…”

mentioning

confidence: 99%

“…Otherwise, only semiquantitative results can be obtained. These methods can of course be useful for comparison with the results from other methods of analysis, and also for the determination of the relative sensitivity factors of hydrogen [34,118]. In all cases, the high error of analysis has to be kept in mind.…”

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confidence: 99%

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Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Dreer¹,

Wilhartitz²

2004

Pure and Applied Chemistry

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The quantitative analysis of thin films containing light elements is very important in improving the coating processes and technological properties of the products. In order to review the state of the art of modern analytical techniques for such applications, the model systems SiOXNY and AlOXNY were selected. Over 1000 abstracts were screened, and the relevant literature was evaluated to give a comprehensive overview of instruments, analytical procedures and results, film types, deposition methods, and investigation goals. From more than 150 citations, the limitations, drawbacks, and pitfalls of the different methods were extracted and reviewed critically, while in addition, improvements were proposed where possible. These suggestions are combined with the newest results of investigation by the authors of this paper. Recommendations concerning the optimized combination of analytical methods for different analytical problems have been worked out on the basis of all results. Analysis of various multicomponent systems containing light elements demonstrated the applicability of the different methods of analysis in combination to all film systems with related compositions.

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Section: Electron Probe Microanalysismentioning

confidence: 99%

Section: Electron Probe Microanalysismentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Dreer¹,

Wilhartitz²

2004

Pure and Applied Chemistry

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“…The synthesis of AIOxN y films has been commonly reported using physical vapor deposition, such as ion-beamassisted evaporation and sputtering method [166,167,169,171]. As shown in some studies [170,173]…”

Section: Introductionmentioning

confidence: 99%

Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Zhu¹

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First and foremost, I gratefully appreciated Nanyang Technological University (NTU) for providing me with the funding sources and conductive working environment that made my Ph.D. work possible. Secondly, I want to thank my supervisor Dr. Chen Tupei. It has been an honor to be his Ph.D. student where he had taught me, both consciously and unconsciously sharing of his invaluable experience and advices. I sincerely appreciate all his contributions of time, ideas, and funding to make my Ph.D. experience productive and stimulating. The members of the Chen Tupei's group have contributed immensely to my personal and professional time at NTU. The group has been a source of friendships as well as good advice and collaboration. My time at NTU was made enjoyable in large part due to the many friends and groups that became a part of my life. I would like to acknowledge honorary group member prof. Liu Yang who was here on sabbatical a couple years ago, where we worked together on the charging effect experiments and was very much appreciated for his enthusiasm, intensity, willingness to teach me the way for experiment setup and results analysis. I am pleased to have the pleasure to work alongside with my past and present group members that consisted of graduate students Dr.

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Accurate Determination of Trace Amounts of Oxygen in CrAlN Hard Coatings by a Combination of WDS–EPMA and SIMS

et al. 2006

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Quantitative analysis of silicon-oxynitride films by EPMA

Cited by 6 publications

References 52 publications

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Accurate Determination of Trace Amounts of Oxygen in CrAlN Hard Coatings by a Combination of WDS–EPMA and SIMS

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