Quantitative analysis of strain field in thin films from HRTEM micrographs

Snoeck, E.; Warot, B.; Ardhuin, H.; Rocher, A.; Casanove, Marie‐José; Kilaas, R.; Hÿtch, Martin

doi:10.1016/s0040-6090(97)01113-9

Cited by 51 publications

(24 citation statements)

References 6 publications

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“…The geometrical phase method has now been used for the analysis of distortion fields around a defect or defect networks as was shown for misfit dislocations in GaSb/GaAs [69] and in CdTe/GaAs [70] or for interaction of threading dislocations and prismatic stacking faults in GaN [71]. It also has been valuable for the calculation of strain fields in hetero-epitaxial pseudomorphic multilayers like CdTe/ZnTe [72], Co/NiO [73].…”

Section: Geometric Phase Methodsmentioning

confidence: 99%

Extracting Quantitative Information from High Resolution Electron Microscopy

Kret

Ruterana

Rosenauer

et al. 2001

phys. stat. sol. (b)

120

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Despite the development of high-resolution electron microscopy (HREM) that allows imaging of most materials, the extraction of quantitative information at atomic scale still requires considerable additional efforts. This review presents the recent developments on techniques that can be used to determine the local strain, chemical composition or atomic structure retrieval in HREM. The source of noise in images and effective methods for improving the signal-to-noise ratio in direct or Fourier space are discussed. The artefacts of filtering are commented. In all the methods, the sample thickness has to be determined. A detailed analysis of the thin foil relaxation effect on the measured distortion fields is presented as well as the possibilities of using finite element calculations for its modelling. The local composition measurement based on the chemically sensitive reflections; pattern recognition and the measurement of lattice parameters are described. Examples from semiconductor heterostructures are discussed. The current state of the strategies used for the retrieval of the atomic configuration of defects from HRTEM images is briefly presented. The limits of detection and the accuracy of the methods are summarised; and it is pointed out that electron holography, focal series reconstruction and the coming Cs corrected microscopes will help to obtain this information with better accuracy. Content

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Section: Geometric Phase Methodsmentioning

confidence: 99%

Extracting Quantitative Information from High Resolution Electron Microscopy

Kret

Ruterana

Rosenauer

et al. 2001

phys. stat. sol. (b)

120

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show abstract

“…24 However, it can also be used for measuring the precise orientation of crystals and detecting interfacial dislocations. 25 The phase refers to the local phase difference between interference fringes in an image and a perfectly periodical reference lattice. The phase is directly related to the displacement field and the phase gradient indicates a change in lattice spacing or orientation.…”

Section: Study Of Interfaces At Atomic Scalementioning

confidence: 99%

Microstructures and interfaces in directionally solidified oxide–oxide eutectics

Mazérolles

Michel

Hÿtch

2005

Journal of the European Ceramic Society

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“…MnO 3 /LAO interface produces a rectangular pattern with a well-defined spot splitting in the out-of-plane direction only, manifesting a nearly coherent interface between the film and the substrate. It is confirmed by the moire patterns (or inverse Fourier transforms [22] 3 , respectively, where a is an in-plane lattice parameter. Therefore, the observed increasing in the out-of-plane lattice parameter in the Ca-rich (y £ 0.5) films is provided by an intensive tetragonal distortion owing to formation of a coherent interface between the film and the substrate.…”

Section: Microstructures Of the Filmsmentioning

confidence: 66%