2006
DOI: 10.1016/j.apsusc.2006.02.265
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Quantitative analysis of surface contaminants on silicon wafers by means of TOF-SIMS

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Cited by 12 publications
(5 citation statements)
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“…A spectrum was acquired with and without O 2 presputtering in the center of the droplet. Oxygen presputtering conditions were similar to those described elsewhere [6] (O 2 + beam at 1 keV rastered over 500 µm × 500 µm for 10 s at low current). The presputtering aims to remove organic surface contamination without significantly altering the quantity of metallic contamination.…”
Section: Resultsmentioning
confidence: 99%
“…A spectrum was acquired with and without O 2 presputtering in the center of the droplet. Oxygen presputtering conditions were similar to those described elsewhere [6] (O 2 + beam at 1 keV rastered over 500 µm × 500 µm for 10 s at low current). The presputtering aims to remove organic surface contamination without significantly altering the quantity of metallic contamination.…”
Section: Resultsmentioning
confidence: 99%
“…However, TOF SIMS has been shown to provide an interesting alternative because of its simplicity, sensitivity and capability to monitor extremely small surfaces. 159 The RSF (relative to 30 Si) were determined by analysis of the contaminated wafer before and after VPD and matching the signal intensities to the amount of removed material. Quantification with TOF SIMS gave concentration data consistent with those obtained by VPD ICP-MS for the removed fraction.…”
Section: Analytical Methodologymentioning
confidence: 99%
“…Few studies have been published in the literature [31][32][33][34]. The required level of cleanliness depends on the application for which the product is manufactured.…”
Section: Future Directionsmentioning
confidence: 99%