Quantitative Assessment of Carrier Density by Cathodoluminescence. I. 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Ga</mml:mi><mml:mi>As</mml:mi></mml:mrow></mml:math>
 Thin Films and Modeling

Chen, Hung-Ling; Scaccabarozzi, Andrea; Lépinau, Romaric De; Oehler, Fabrice; Lemaı̂tre, A.; Harmand, J. C.; Cattoni, Andréa; Collin, Stéphane

doi:10.1103/physrevapplied.15.024006

Cited by 9 publications

(20 citation statements)

References 52 publications

(74 reference statements)

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“…It is used to eliminate faulty regions and to study variations of the carrier concentration in wellcontrolled homogeneous regions. In a previous work, we have demonstrated the quantitative analysis of electron concentration in Si-doped GaAs NWs [35], and the luminescence analysis method has been further validated on a series of p-type and n-type GaAs planar reference thin films [36]. Here, we extend this work to a series of Be-doped (core and shell) and Si-doped (shell) GaAs NWs grown under different conditions.…”

Section: Introductionmentioning

confidence: 76%

“…CL spectra are fitted using the generalized Planck's law and a parabolic absorption model convoluted with an Urbach tail, following the method described in Ref. [36]. Due to the small size of the NWs, we neglect the reabsorption effect so that the absorptivity is approximated by the absorption coefficient α(hω) [47].…”

Section: Be-doped Gaas Nanowiresmentioning

confidence: 99%

“…The main emission peak can be fitted following the method developed in Ref. [36]. However, for the two thinner luminescence peaks of shell-4 and shell-5 (A), the electron concentration is probably below the degeneration threshold and the electron Fermi level E f c cannot be deduced accurately.…”

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

“…This may be related to the kconservation in the radiative recombination of electrons above the degenerate Fermi level with holes that are not thermalized to the band edge [55]. The electron Fermi level of 152 meV corresponds to an electron concentration of 5.1×10 18 cm −3 [36].…”

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

“…The electron concentration is estimated using the LT FWHM and the empirical relation established in Ref. [36], see Fig. 8(b).…”

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

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Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Chen,

De Lépinau,

Scaccabarozzi

et al. 2019

Preprint

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Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and Si (n-type) doping using high-resolution cathodoluminescence (CL) mapping at low-and room-temperature. CL spectra are analyzed selectively in different regions of the NWs. Room-temperature luminescence is fitted with the generalized Planck's law and an absorption model, and the bandgap and band tail width are extracted. For Be-doped GaAs NWs, the bandgap narrowing provides a quantitative determination of the hole concentration ranging from about 1 × 10 18 to 2 × 10 19 cm −3 , in good agreement with the targeted doping levels. For Si-doped GaAs NWs, the electron Fermi level and the full-width at half maximum of low-temperature CL spectra are used to assess the electron concentration to approximately 3 × 10 17 to 6 × 10 17 cm −3 . These findings confirm the difficulty to reach highly-doped n-type GaAs NWs, may be due to doping compensation. Notably, signatures of high concentration (5-9×10 18 cm −3 ) at the very top of NWs are unveiled.

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Section: Introductionmentioning

confidence: 76%

Section: Be-doped Gaas Nanowiresmentioning

confidence: 99%

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

“…The electron concentration is estimated using the LT FWHM and the empirical relation established in Ref. [36], see Fig. 8(b).…”

Section: Si-doped Gaas Nanowiresmentioning

confidence: 99%

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Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Chen,

De Lépinau,

Scaccabarozzi

et al. 2019

Preprint

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CdZnTe Crystal Quality Study by Cathodoluminescence Measurements

Léger

Bidaud

Collin

et al. 2023

J. Electron. Mater.

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Nanosecond Carrier Lifetime of Hexagonal Ge

van Lange,

Dijkstra,

Fadaly

et al. 2024

ACS Photonics

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Hexagonal Si 1−x Ge x with suitable alloy composition promises to become a new silicon compatible direct bandgap family of semiconductors. Theoretical calculations, however, predict that the binary end point of this family, the bulk hex-Ge crystal, is only weakly dipole active. This is in contrast to hex-Si 1−x Ge x , where translation symmetry is broken by alloy disorder, permitting efficient light emission. Surprisingly, we observe equally strong radiative recombination in hex-Ge as in hex-Si 1−x Ge x nanowires, but scrutinizing experiments on the radiative lifetime and the optical transition matrix element of hex-Ge remain hitherto unexplored. Here, we report an advanced spectral line shape analysis exploiting the Lasher−Stern−Wurfel (LSW) model on an excitation density series of hex-Ge nanowire photoluminescence spectra covering 3 orders of magnitude. The analysis was performed at low temperature where radiative recombination is dominant. We analyze the amount of photoinduced bandfilling to obtain direct access to the excited carrier density, which allows to extract a radiative lifetime of (2.1 ± 0.3) ns by equating the carrier generation and recombination rates. In addition, we leveraged the LSW model to independently extract a high oscillator strength of 10.5 ± 0.9, comparable to the oscillator strength of III/V semiconductors like GaAs or GaN, showing that the optical properties of hex-Ge nanostructures are perfectly suited for a wide range of optoelectronic device applications.

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Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs Thin Films and Modeling

Cited by 9 publications

References 52 publications

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

CdZnTe Crystal Quality Study by Cathodoluminescence Measurements

Nanosecond Carrier Lifetime of Hexagonal Ge

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