Quantitative Comparison of Solid-State Microwave Detectors

Cowley, A.; Sørensen, Henning Osholm

doi:10.1109/tmtt.1966.1126337

Cited by 174 publications

(74 citation statements)

References 22 publications

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“…28 At low frequencies and for R D ) ReðZ s Þ, the responsivity is b Zs % À2cReðZ s Þ. At zero-bias, the dominating noise process is Johnson noise.…”

mentioning

confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz 1 =2 and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors. Graphene exhibits electronic properties which are relevant for high-frequency applications 1 such as zero-bias detection in passive imaging arrays. 2 Detectors drawing zero bias current offer reduced 1/f-noise compared to biased detectors. Zero-bias detectors are today normally based on heterojunctions or Schottky diodes, reaching noise-equivalent power (NEP) below 20 pW/Hz 1 =2 beyond 100 GHz. 3,4 Zero-bias detection has been demonstrated in graphene field-effect transistors (FETs) with an NEP of 515 pW/Hz 1 =2 at 600 GHz. 5 Self-switching diodes (SSDs) offer a fundamentally different approach to zero-bias detection in which rectification and detection is achieved by a lateral field-effect. 6 Simulations have shown the feasibility of achieving rectification in graphene using SSD structures. 7,8 SSD detectors have previously been realized in other materials 9-12 with the most promising results for GaAs SSDs in which an NEP of 330 pW/Hz 1 =2 at 1.5 THz was observed. 13 In this work, detection with rectifying graphene SSDs at frequencies up to 67 GHz is demonstrated. The SSDs are realized in both as-grown (n-type) and hydrogen-intercalated (p-type) epitaxial graphene on SiC. Figure 1 shows a scanning electron micrograph of a single SSD channel fabricated in epitaxial graphene. The narrow graphene channel behaves as a lateral nanowire transistor. 6 The surrounding flanges act as lateral gates which are directly connected to the drain such that the drain voltage is simultaneously applied to the gates. This has the effect of modulating the carrier density in the nanowire channel generating a nonlinear current-voltage characteristic. 14 The inset shows an SSD design implemented for RF detection with nine nanowire channels acting in parallel to reduce resistance and NEP. 15 The SSDs were fabricated at the end of a 70 lm coplanar transmission line, in order to provide a partial RF match.Graphene was grown on the Si-face of two 20 Â 20 mm 2 nominally on-axis semi-insulating (SI) 4H-SiC substrates in a horizontal hot wall chemical vapor deposition (CVD) reactor. 16 Graphene growth was carried out at 1300 C to 1400 C in vacuum after an initial in-situ surface preparation of the substrates in a hydrogen/silane background. One of the samples was then intercalated in hydrogen at a temperature (pressure) of 800 C (500 mbar) in order to obtain quasi-free standing graphene. SSDs and supplementary test structures were fabricated on the graphene layers with and without H-intercalation. As-grown samples then consisted of a monolayer plus carbon buf...

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“…28 At low frequencies and for R D ) ReðZ s Þ, the responsivity is b Zs % À2cReðZ s Þ. At zero-bias, the dominating noise process is Johnson noise.…”

mentioning

confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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“…The frequency response of the diode, measured up to 3 GHz, is shown in Fig. 4(b); it exhibits typical first-order dependence for frequencies, which can be fit by [16]:…”

Section: B High Frequency Ac Measurementmentioning

confidence: 98%

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

Etor

Dodd

Wood

et al. 2016

IEEE Trans. Electron Devices

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Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) <1  Abstract-The design and fabrication metal-insulator-metal (MIM) diodes using an ultra-thin organic insulator is presented. The insulating layer was found to be compact, highly conformal, and uniform, effectively overcoming the main design challenge in MIM diodes. The diodes have strong non-linear current-voltage characteristics with a typical zero-bias curvature coefficient 5.4 V -1 and a voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The fabrication of the diodes only requires lowtemperature processing, is cost effective, and can potentially be ported to large-area roll-to-roll manufacturing.Index Terms-Metal-insulator-metal diodes, microwave diode, molecular electronics, octadecyltrichlorosilane.

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“…1), the device rectified current δI SBD can be found using the Taylor series at low level signals (ΔV 0 <~ nφ t ) and the time averaging. In the case of SBDs [27], …”

Section: Currents and Voltagesmentioning

confidence: 99%

“…THz radiation that is received by the antenna with the impedance Z A generates the high frequency voltage with the amplitude V A in the antenna-detector circuit. In SBDs, the internal impedance is the differential resistance of the metal-semiconductor contact [27] Z int = 1/σ 0 . In FETs, the internal impedance can be calculated in approximation of double-pass line with distributed parameters [7,28] …”

Section: Currents and Voltagesmentioning

confidence: 99%

Untitled

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

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Quantitative Comparison of Solid-State Microwave Detectors

Cited by 174 publications

References 22 publications

Graphene self-switching diodes as zero-bias microwave detectors

Graphene self-switching diodes as zero-bias microwave detectors

An Ultrathin Organic Insulator for Metal–Insulator–Metal Diodes

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