Quantitative control of etching reactions on various SiOCH materials

Tatsumi, Tetsuya; Urata, Kazuya; Nagahata, Kazunori; Saitoh, Takashi; Nogami, Yoshihiro; Shinohara, Kazunori

doi:10.1116/1.1861938

Cited by 20 publications

(10 citation statements)

References 17 publications

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“…SiOCH films are widely used in 90 and 65 nm technology nodes of devices. [1][2][3][4][5] However, the processes to make a damascene structure using SiOCH films have several issues: the narrow etching window, 6 ash damage, 1 PR poisoning during lithography, 2,3 delamination caused by poor mechanical and chemical properties of low-k material, 3,4 and stress induced voiding failure in Cu interconnects. 4,7 Therefore, the stable and precise control of etching, deposition, and chemical mechanical polishing ͑CMP͒ are strong requirements for manufacturing devices.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Momonoi

Yonekura

Izawa

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We investigated the mechanism for differences in etched depth between isolated and dense via holes of a damascene structure using a SiOCH film (k=2.8). In Ar∕CHF3∕N2 and Ar∕C4F6∕N2 plasmas, the depth of an isolated (4.8μm pitch) hole was more than 40% varied from a dense (200nm pitch) hole. The difference between dense and isolated holes was found to become larger with increasing air exposure time of the wafer. The amount of H2O in the SiOCH film also increased with increasing air exposure time based on thermal desorption spectroscopy (TDS) analysis. Therefore, we investigated the effects of H2O addition to the plasmas. The investigation revealed that the etched depths of dense holes became similar to those of isolated holes with H2O addition. Based on these results, we concluded that the mechanism for the difference between isolated and dense holes was as follows. When the capping layer on SiOCH is etched, the H2O contained in SiOCH desorbs in etched holes and affects etching reactions. The etching characteristics of isolated holes are significantly affected, since the amount of desorbed H2O in isolated holes is larger than that in dense holes.

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Section: Introductionmentioning

confidence: 99%

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Momonoi

Yonekura

Izawa

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…3 This concept of OSG etching was proved by the experimental results of Tatsumi et al 15 Plasma assisted etch of silicon dioxide-based materials involves different types of reactive species and different types of surface phenomena such as radical generation, polymer deposition and removal, ion energy transfer through the polymer layer, physical sputtering, etc.…”

Section: B Formalism Of Osg Etch By Fluorocarbon Plasmasmentioning

confidence: 99%

Design specific variation in via/contact pattern transfer: Full chip analysis

Choy

Sukharev

Markosian

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMicron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistors A novel model-based algorithm provides a capability to control full chip design specific variation in pattern transfer caused by via/contact etch processes. This physics-based algorithm is capable of detecting and reporting hot spots based on the fab defined thresholds of acceptable variations in the critical dimension of etched shapes. It can also be used as a tool for etch process optimization to capture the impact of a variety of patterns presented in a particular design. A realistic set of process parameters employed by the developed model allows using this novel via-contact etch electronic design automation tool for the design-aware process optimization in addition to the "standard" process-aware design optimization. Measurements of the postetch geometries of contact holes etched in the organosilicate glass with fluorocarbon plasma ͑C 4 F 8 / N 2 / Ar͒ are used for model validation and calibration.

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“…It should be noted that etch engineers try to optimize the recipe to reach the etching conditions of "thin polymer" region in order to obtain a smooth surface and a high etch rate [13]. At the same time for those locations where etch was stopped the etching conditions (relations between fluxes, energy and polymer thickness) are belonged to the extension of the "thick polymer" region toward the zero etch rate [8].…”

Section: Mathematical Formulation Of the Etch Mechanismmentioning

confidence: 99%

Design specific variation in pattern transfer by via/contact etch process: full-chip analysis

et al. 2009

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A novel model-based algorithm provides a capability to control full-chip design specific variation in pattern transfer caused by via/contact etch processes. This physics based algorithm is capable of detecting and reporting etch hotspots based on the fab defined thresholds of acceptable variations in critical dimension (CD) of etched shapes. It can be used also as a tool for etch process optimization to capture the impact of a variety of patterns presented in a particular design. A realistic set of process parameters employed by the developed model allows using this novel via-contact etch (VCE) EDA tool for the design aware process optimization in addition to the "standard" process aware design optimization.

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Quantitative control of etching reactions on various SiOCH materials

Abstract: Articles you may be interested inEtch mechanisms of hybrid low-k material (SiOCH with porogen) in fluorocarbon based plasma

Cited by 20 publications

References 17 publications

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Design specific variation in via/contact pattern transfer: Full chip analysis

Design specific variation in pattern transfer by via/contact etch process: full-chip analysis

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