Quantitative determination of oxygen in thin oxide films on metals by electron-excited X-ray emission

Mitchell, D. F.; Sewell, P. B.

doi:10.1016/0040-6090(74)90221-1

Cited by 28 publications

(12 citation statements)

References 22 publications

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“…Assuming an isotropic distribution of the 0 K x-rays, combining eqns (1) and (2) and correcting for the absorption of 0 K x-rays, the detected intensity of 0 K x-rays from a top layer of thickness L can be written as…”

Section: Definition and Evaluation Of The Depth Sampledmentioning

confidence: 99%

X‐ray fluorescence analysis for oxygen on and in materials

Musket

1990

X-Ray Spectrometry

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Quantitative analysis for oxygen on the surface and in the bulk of materials has been demonstrated using an energy-dispersive x-ray fluorescence system. The system consists of an A1 K x-ray source, an ultra-thin-windowed Si(Li) detector and an ion gun for sputter cleaning. Sputter cleaning was required to distinguish between surface and bulk 0 K x-ray signals. Since beryllium has one of the lowest mass absorption coefiicients for 0 K x-rays, calculations and extensive measurements were made for oxygen on and in beryllium. The 3-u detection limits were 0.22 om of Be0 on beryllium and 98 atomic parts per million (appm) of oxygen in beryllium. Measurements of surface oxides on other materials indicated detection limits of 1.9 nm of SiO, on silicon and 2.0 nm of Ta,O, on tantalum. The corresponding detection limits for oxygen in silicon and tantalum were 0.39 and 4.3 at.-%, respectively.

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Section: Definition and Evaluation Of The Depth Sampledmentioning

confidence: 99%

X‐ray fluorescence analysis for oxygen on and in materials

Musket

1990

X-Ray Spectrometry

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“…240°C to produce a known uptake of oxygen as Fe304. 8 Thickness was estimated to be 20* 1 nm, based on oxidation kinetics. stainless steel (thin oxide)-electropolished for 2 min then vacuum annealed at 900 "C for 1 h at 5 x lo-' Pa, then electropolished again.…”

Section: Experimental Approachmentioning

confidence: 99%

Calibration of argon ion sputter rates using nuclear microanalysis and Auger spectroscopy

Tapping

Davidson

Jackman

1985

Surface & Interface Analysis

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Atomic Energy of Canada Limited, Chalk River Nuclear Laboratories, Chalk River, Ontario, Canada KOJ IJO Auger electron spectroscopy (AES), in conjunction with argon ion sputtering, is frequently used to obtain composition versus depth profiles. Thin film thicknesses may be estimated from such profiles if the argon ion sputtering rate of a particular material is known. For this work, a series of oxide standards was prepared and calibrated with nuclear microanalysis techniques. These standards were then used to calibrate the composition versus depth profiles obtained using AES.

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“…Using the additional K# band that appears when oxide is present on Al, Wolfgang (287) determined the oxidation state of Al from the intensity ratio of the Kf) band of the sample and a standard oxide. Mitchell and Sewell (180) determined oxygen in thin oxide films on Al using the electron microprobe. The surface chemistry of highly dispersed AI2O3 was studied by Chuiko et al (49) using infrared spectrophotometry.…”

Section: Almentioning

confidence: 99%