2009
DOI: 10.1103/physrevb.80.085305
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Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model

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Cited by 47 publications
(44 citation statements)
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“…It can be seen that the surface potential of the GeSi QRs exhibits a ring-shaped feature, showing that the QRs' rim has smaller CPD values than the QRs' central hole. In SKM, the measured CPD is defined as Φ tip − Φ sample [37-39], where Φ tip and Φ sample are work functions of the tip and the sample, respectively. The conductive tip used in SKM was W 2 C-coated Si tip.…”
Section: Resultsmentioning
confidence: 99%
“…It can be seen that the surface potential of the GeSi QRs exhibits a ring-shaped feature, showing that the QRs' rim has smaller CPD values than the QRs' central hole. In SKM, the measured CPD is defined as Φ tip − Φ sample [37-39], where Φ tip and Φ sample are work functions of the tip and the sample, respectively. The conductive tip used in SKM was W 2 C-coated Si tip.…”
Section: Resultsmentioning
confidence: 99%
“…Experimental determination of the positron affinity requires the knowledge of the electron work function. Such measurements are often based on the contact potential difference method (e.g., Kelvin probe) which has recently been doubted to be really related to this difference for semiconductors [36]. This might lead to the revision of some experimental results related to positron affinity determination.…”
Section: Methodsmentioning
confidence: 99%
“…The theory of spatial resolution, effect of topographic inhomogeneities (topographic cross-talk), and image formation mechanism in KPFM for conductive and semiconductive materials are studied extensively. [ 89 ] The complementary approach for electrostatic force imaging is Electrostatic Force Microscopy (EFM), in which the electrostatic force gradient acting on the tip is determined from the resonant frequency shift of dc biased vibrating cantilever, 2 . Unlike KPFM, the absolute strength of signal in EFM is diffi cult to quantify and the method is more sensitive to surface topography through the tip-surface force gradient, C ′ ′ .…”
Section: Imaging Of Active Device Structuresmentioning
confidence: 99%