Quantitative Electron Energy-Loss Spectroscopy

Egerton, R.F.; Leapman, Richard D.

doi:10.1007/978-3-540-48995-5_5

Cited by 14 publications

(7 citation statements)

References 24 publications

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“…An in-column Ω-type energy filter we used for cryoEM image data collection enables the measurement of the ice thickness relatively easily without burning a hole in the ice layer and tilting a grid as usually done otherwise. The thickness of ice ( t ) was estimated from the ratio of the filtered ( I +ef ) to the unfiltered intensity ( I −ef ) as,

\frac{t}{normalΛ} = ln (\frac{I_{- ef}}{I_{+ ef}})

Λ is the mean free path of inelastically-scattered electrons (Egerton and Leapman, 1995). I + ef show a strong and clear correlation with the thickness of ice while the correlation between I − ef and the ice thickness is much weaker (Fig.…”

Section: Resultsmentioning

confidence: 99%

Structure of the ParM filament at 8.5Å resolution

Gayathri

Fujii

Namba

et al. 2013

Journal of Structural Biology

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The actin-like protein ParM forms the cytomotive filament of the ParMRC system, a type II plasmid segregation system encoded by Escherichia coli R1 plasmid. We report an 8.5 Å resolution reconstruction of the ParM filament, obtained using cryo-electron microscopy. Fitting of the 3D density reconstruction with monomeric crystal structures of ParM provides insights into dynamic instability of ParM filaments. The structural analysis suggests that a ParM conformation, corresponding to a metastable state, is held within the filament by intrafilament contacts. This filament conformation of ParM can be attained only from the ATP-bound state, and induces a change in conformation of the bound nucleotide. The structural analysis also provides a rationale for the observed stimulation of hydrolysis upon polymerisation into the filament.

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\frac{t}{normalΛ} = ln (\frac{I_{- ef}}{I_{+ ef}})

Section: Resultsmentioning

confidence: 99%

Structure of the ParM filament at 8.5Å resolution

Gayathri

Fujii

Namba

et al. 2013

Journal of Structural Biology

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“…EGERTON has shown how to correct for the effects of elastic scattering [33,34]. The minimum detectable number of atoms also depends on the reduction of intensity by the inelastic scattering of the other matrix elements that produce a background [35], because an increased background will increase the uncertainty in the measurement. …”

Section: Issues In the Interpretation Of Eels Of Novel Gate Stacks Lamentioning

confidence: 99%

Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy

Foran¹,

Barnett²,

Lysaght³

et al. 2005

Journal of Electron Spectroscopy and Related Phenomena

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Novel metal oxide films and new metal gates are currently being developed for future generations of Si based field-effect transistors as the SiO 2 gate dielectric and polycrystalline Si gate electrode are reaching scaling limits. These new gate stacks are often comprised of subnanometer layers. Device properties are increasingly controlled by the complex structure and chemistry of interfaces between the layers. Electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM) is capable of providing insights into interfacial chemistry and local atomic structure with a spatial resolution unmatched by any other technique. Using gate stacks with Hf-silicate dielectrics as examples, we demonstrate the capabilities of STEM/EELS for analyzing the interfacial chemistry of novel gate stacks. We show that a-priori unknown reaction layers of a few Å thickness can be detected and identified even in the presence of substantial interfacial roughness that may obscure such layers in a highresolution image. We discuss some experimental aspects of STEM/EELS chemical profiling applied to gate stacks and the factors affecting the interpretation. In particular, the effects of interfacial roughness, beam spreading, elemental analysis in a heavily scattering matrix, and the interpretation of the EELS core-loss fine-structures from ultrathin layers are discussed.

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“…where t is the geometric sample thickness, Λ the inelastic mean free path, I tot the total unfiltered intensity and I zl the intensity formed by the zero‐loss electrons (i.e. the unscattered and purely elastically scattered electrons) (Egerton & Leapman, 1995). The intensities I tot and I zl can be measured by electron energy‐loss spectroscopy (EELS) (Grimm et al ., 1996b), by electron‐spectroscopic diffraction (ESD) (Angert et al ., 1996) or by recording them directly in the electron spectroscopic imaging (ESI) mode.…”

Section: Introductionmentioning

confidence: 99%

Determination of the inelastic mean free path of electrons in vitrified ice layers for on‐line thickness measurements by zero‐loss imaging

Feja

Aebi

1999

Journal of Microscopy

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SummaryThe inelastic mean free path of 120 keV electrons in vitrified ice layers has been determined in an energy-filtering TEM. From the ratio of the unfiltered and zero-loss-filtered image intensities recorded with a slow-scan CCD camera, the relative sample thickness t/L can be calculated. For calibration, the geometric ice thickness was measured by imaging a tilted view of a cylindrical hole which had been burnt into the ice layer. The total inelastic mean free path was found to be 161 nm, and the partial inelastic mean free path for an acceptance angle of 4·2 mrad was 232 nm. These results were built into a standard protocol for use in cryo-electron microscopy allowing on-line measurements of local ice-layer thicknesses by zero-loss-filtered/unfiltered imaging.

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Quantitative Electron Energy-Loss Spectroscopy

Cited by 14 publications

References 24 publications

Structure of the ParM filament at 8.5Å resolution

Structure of the ParM filament at 8.5Å resolution

Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy

Determination of the inelastic mean free path of electrons in vitrified ice layers for on‐line thickness measurements by zero‐loss imaging

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