Quantitative analysis for oxygen on the surface and in the bulk of materials has been demonstrated using an energy-dispersive x-ray fluorescence system. The system consists of an A1 K x-ray source, an ultra-thin-windowed Si(Li) detector and an ion gun for sputter cleaning. Sputter cleaning was required to distinguish between surface and bulk 0 K x-ray signals. Since beryllium has one of the lowest mass absorption coefiicients for 0 K x-rays, calculations and extensive measurements were made for oxygen on and in beryllium. The 3-u detection limits were 0.22 om of Be0 on beryllium and 98 atomic parts per million (appm) of oxygen in beryllium. Measurements of surface oxides on other materials indicated detection limits of 1.9 nm of SiO, on silicon and 2.0 nm of Ta,O, on tantalum. The corresponding detection limits for oxygen in silicon and tantalum were 0.39 and 4.3 at.-%, respectively.