Quantitative interpretation of HRTEM images using multivariate statistics: the case of the (γ, γ′)-interface in a Ni base superalloy

Aebersold, J.F.; Stadelmann, PA; Rouvière, J. L.

doi:10.1016/0304-3991(95)00148-4

Cited by 17 publications

(17 citation statements)

References 14 publications

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“…Another approach, that does not require three template image vectors, uses the correspondence analysis (CA) [82], which is also implemented in the DALI program package. This procedure is analogous to the interpretation of the cloud of data points given by the multidimensional vector R as a distribution of masses that approximates the shape of a nearly 2D ellipsoid.…”

Section: Foil Thicknessmentioning

confidence: 99%

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Extracting Quantitative Information from High Resolution Electron Microscopy

Kret

Ruterana

Rosenauer

et al. 2001

phys. stat. sol. (b)

120

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Despite the development of high-resolution electron microscopy (HREM) that allows imaging of most materials, the extraction of quantitative information at atomic scale still requires considerable additional efforts. This review presents the recent developments on techniques that can be used to determine the local strain, chemical composition or atomic structure retrieval in HREM. The source of noise in images and effective methods for improving the signal-to-noise ratio in direct or Fourier space are discussed. The artefacts of filtering are commented. In all the methods, the sample thickness has to be determined. A detailed analysis of the thin foil relaxation effect on the measured distortion fields is presented as well as the possibilities of using finite element calculations for its modelling. The local composition measurement based on the chemically sensitive reflections; pattern recognition and the measurement of lattice parameters are described. Examples from semiconductor heterostructures are discussed. The current state of the strategies used for the retrieval of the atomic configuration of defects from HRTEM images is briefly presented. The limits of detection and the accuracy of the methods are summarised; and it is pointed out that electron holography, focal series reconstruction and the coming Cs corrected microscopes will help to obtain this information with better accuracy. Content

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Section: Foil Thicknessmentioning

confidence: 99%

“…QUANTITEM has been applied mostly to determine the thickness in sphalerite semiconductors so far. The CA procedure was demonstrated in a (Ni, Al) superalloy [82].…”

Section: Foil Thicknessmentioning

confidence: 99%

Extracting Quantitative Information from High Resolution Electron Microscopy

Kret

Ruterana

Rosenauer

et al. 2001

phys. stat. sol. (b)

120

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“…These oriented images could then be used to reconstruct a 3-dimensional model of the virus. MSA has since been applied in crystallographic analysis of phase-contrast images and used as a means of pattern recognition, proving especially useful for phase identification near grain boundaries [5][6][7][8]. Because these studies were based on phase-contrast imaging, nearly perfect samples and non-linear classification methods were required to compensate for the complicated contrast changes associated with differences in thickness and defocus [9].…”

Section: Introductionmentioning

confidence: 99%

Point defect characterization in HAADF-STEM images using multivariate statistical analysis

et al. 2011

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“…A detailed discussion on FAC approach for analysis of HRTEM images has been described elsewhere [28][29][30], only a brief description of calculations pertaining to the images investigated in this study is presented. The entire image is first subdivided into unit cells of size 2.8Åx2.8Å digitized to n x n pixels, such that the As atoms are located at the corners and the Al/Ga atoms at the center.…”

Section: Quantifying Stoichiometry Of Iii-v Semiconductor Interfacesmentioning

confidence: 99%

“…While integrated intensities within each unit cell would suffice for the analysis of the (noise free) simulated images, a more reliable technique, which is robust to the noise levels present in experimental images, is required. In the present study we employ the method of FAC, which has previously been used for the analysis of conventional HRTEM images of interfaces in GaAs/AlGaAs heterostructures [27] and precipitate/matrix (γ ' /γ) interfaces in Ni alloys [28].…”

Section: Quantifying Stoichiometry Of Iii-v Semiconductor Interfacesmentioning

confidence: 99%

Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

Mahalingam¹

2006

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information SPONSORING/MONITORING AGENCY REPORT NUMBER(S) AFRL-ML-WP-TR-2006-4248 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications. A new approach is developed for true atomic scale compositional mapping of interfaces in mixed cation-anion III-V semiconductor heterostructures. This approach is applied for quantifying stoichiometry of interfaces in InAs/InGaSb superlattices. Detailed TEM studies were performed on short-period InAs/GaSb superlattices eith periods ranging from 50A to 11A. Significant degradation in structural quality was observed with reduction in the superlattice period. Improvement in quality is however achieved by reducing the growth rate (specifically in the GaSb growth rate). The formation of heterojunction quantum dots (QD) composed of a combination of InAs and GaSb is demonstrated. The composite dot is achieved by first forming InAs QDs by normal self assembly process followed by growth of a GaSb crown atop the InAs QD structure. Transmission electron microscopy indicated a clear boundary between the GaSb and InAs regions with energy dispersive spectroscopy analysis showing an In rich core and a Sb rich cap. SUPPLEMENTARY NOTES PAO

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Quantitative interpretation of HRTEM images using multivariate statistics: the case of the (γ, γ′)-interface in a Ni base superalloy

Cited by 17 publications

References 14 publications

Extracting Quantitative Information from High Resolution Electron Microscopy

Extracting Quantitative Information from High Resolution Electron Microscopy

Point defect characterization in HAADF-STEM images using multivariate statistical analysis

Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

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