2008
DOI: 10.1016/j.physb.2007.10.157
|View full text |Cite
|
Sign up to set email alerts
|

Quantitative measurement of deformation field around low-angle grain boundaries by electron microscopy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
10
0

Year Published

2008
2008
2020
2020

Publication Types

Select...
9
1

Relationship

1
9

Authors

Journals

citations
Cited by 29 publications
(11 citation statements)
references
References 15 publications
1
10
0
Order By: Relevance
“…, for measuring strain near a dislocation , for observing singularities like disclinations in nanoparticles , for measuring residual stresses and for measuring deformation near a crack tip. Strain fields were also measured in many other situations, for instance, around low‐angle grain boundaries , in silicon transistors , in nanowires or in MEMS devices . The geometric phase analysis (GPA) briefly described in Section 4.4 was employed in these last examples.…”
Section: Examplesmentioning
confidence: 99%
“…, for measuring strain near a dislocation , for observing singularities like disclinations in nanoparticles , for measuring residual stresses and for measuring deformation near a crack tip. Strain fields were also measured in many other situations, for instance, around low‐angle grain boundaries , in silicon transistors , in nanowires or in MEMS devices . The geometric phase analysis (GPA) briefly described in Section 4.4 was employed in these last examples.…”
Section: Examplesmentioning
confidence: 99%
“…Recently, highresolution transmission electron microscopy (HRTEM) has become a powerful tool for mapping the displacements and the strain fields at the nano-scale level because of the development of quantitative image analysis methods [1,2], and especially, the geometric phase analysis (GPA) technique, whose accuracy has demonstrated that it could be measured to 0.003 nm, is one of such techniques [3,4]. So far, the GPA has successfully been applied to a wide variety of systems, such as quantum dots [5], nanowires [6], Si/Ge heterostructures [7] and low-angle grain boundaries [8]. Furthermore, the GPA technology has also been applied to quantitative measurements of the displacement field of the edge dislocation in metal aluminum and gold [1,9].…”
Section: Introductionmentioning
confidence: 99%
“…This value is purely geometric. However, it has been shown the existence of chemically altered zone around the GB, in relation with short-and long-range elastic strain fields and solid segregation gradients [39,40]. This strained/distorted region around the structural grain boundary corresponds to the zone of enhanced diffusion rate or the ''segregational'' zone.…”
Section: Simulation Proceduresmentioning
confidence: 99%