2009
DOI: 10.1073/pnas.0809316106
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Quantitative modeling of the role of surface traps in CdSe/CdS/ZnS nanocrystal photoluminescence decay dynamics

Abstract: Charge carrier trapping is an important phenomenon in nanocrystal (NC) decay dynamics because it reduces photoluminescence (PL) quantum efficiencies and obscures efforts to understand the interaction of NC excitons with their surroundings. Particularly crucial to our understanding of excitation dynamics in, e.g., multiNC assemblies, would be a way of differentiating between processes involving trap states and those that do not. Direct optical measurement of NC trap state processes is not usually possible becau… Show more

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Cited by 330 publications
(423 citation statements)
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“…The trapping times (a) are plotted as a function of δ∆E (∆E = ∆E ht v or ∆E = ∆E sj c ) to account for possible variations in the trap depth ∆E ht v (or, equivalently, -however with the opposite sign -in the calculated value of ∆E sj c , see Figure 1), around its calculated position (δ∆E = 0), due to size/shape anisotropy in the sample and/or external causes (such as local electric fields). The matrix elements (b) are displayed as a function of the energy difference between the initial excitonic state E i (n) and the lowermost final excitonic state E f (1). The different regimes corresponding to the positive and negative values of E i (n) − E f (1) are schematically depicted by the cartoons.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The trapping times (a) are plotted as a function of δ∆E (∆E = ∆E ht v or ∆E = ∆E sj c ) to account for possible variations in the trap depth ∆E ht v (or, equivalently, -however with the opposite sign -in the calculated value of ∆E sj c , see Figure 1), around its calculated position (δ∆E = 0), due to size/shape anisotropy in the sample and/or external causes (such as local electric fields). The matrix elements (b) are displayed as a function of the energy difference between the initial excitonic state E i (n) and the lowermost final excitonic state E f (1). The different regimes corresponding to the positive and negative values of E i (n) − E f (1) are schematically depicted by the cartoons.…”
Section: Resultsmentioning
confidence: 99%
“…However the details of the trapping dynamics in many materials are still subject of debate and intense research. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] In particular, in some cases it is even unclear whether it is the trapping of the electron and/or that of the hole that affects the fluorescence efficiency, as several non-radiative decay components have been observed with different magnitudes (sometimes differing by several orders of magnitude for the same material), prompting the suggestion that different types of traps must be present. This is the case of CdTe CQDs, where recent experimental studies have evidenced fluorescence decay curves that required at least a tri-exponential function to yield good agreement with the observed kinetics.…”
Section: Abstract: Trapping Surface Auger Processes Nanocrystals mentioning
confidence: 99%
“…In fact the variation of the surface state distribution and density near the band-edge amongst single NCs was recently elucidated 19 , suggesting that it may be possible for some NCs to be almost free from the influence of surface states in the bandedge fine structure region.…”
mentioning
confidence: 99%
“…In general, the surface of a NC is a complex interface between crystal surface atoms and molecular ligands that bind to individual surface sites in order to passivate dangling bonds. It is known that the surface coverage is not complete; 17 thus, a NC has many possible surface configurations, which in turn have different associated charge distributions. Thus, a reasonable model of SD is one involving photoactivated rearrangement of surface ligands causing discrete jumps 13 between different surface configurations in a complex potential landscape.…”
mentioning
confidence: 99%