A robust understanding of the mechanoelectric
response of organic
semiconductors is crucial for the development of materials for flexible
electronics. In particular, the prospect of using external mechanical
strain to induce a controlled modulation in the charge mobility of
the material is appealing. Here we develop an accurate computational
protocol for the prediction of the mechanical strain dependence of
charge mobility. Ab initio molecular dynamics simulations with a van
der Waals density functional are carried out to quantify the off-diagonal
electronic disorder in the system as a function of strain by the explicit
calculation of the thermal distributions of electronic coupling matrix
elements. The approach is applied to a representative molecular organic
semiconductor, single-crystal rubrene. We find that charge mobility
along the high-mobility direction
a⃗
increases
with compressive strain, as one might expect. However, the increase
is larger when compressive strain is applied in the perpendicular
direction than in the parallel direction with respect to
a⃗
, in agreement with experimental reports. We show that this seemingly
counterintuitive result is a consequence of a significantly greater
suppression of electronic coupling fluctuations in the range of 50–150
cm
–1
, when strain is applied in the perpendicular
direction. Thus our study highlights the importance of considering
off-diagonal electron–phonon coupling in understanding the
mechanoelectric response of organic semiconducting crystals. The computational
approach developed here is well suited for the accurate prediction
of strain–charge mobility relations and should provide a useful
tool for the emerging field of molecular strain engineering.