Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Shimomura, Takaaki; Kubo, Yoshiki; Barjon, Julien; Tokuda, Norio; Akimoto, Ikuko; Naka, N.

doi:10.1103/physrevmaterials.2.094601

Cited by 11 publications

(6 citation statements)

References 30 publications

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“…In previous studies on moderate purity diamonds [4], the decay time was modeled in the range 75 − 300 K by considering nonradiative processes in the bulk lifetime, i.e., impurity trapping and exciton ionization. Contrary to this, we found that the impurity trapping occurred significantly slower than the radiative decay in the present samples, based on the upper limits of the impurity concentrations and capture cross sections [11]. The possibility of exciton two-body annihilation was also excluded, considering the low exciton density (< 10 16 cm −3 ).…”

Section: Sample Characterization -contrasting

confidence: 79%

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Diffusion-related lifetime and quantum efficiency of excitons in diamond

et al. 2020

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We investigate the lifetime of indirect excitons in extremely high purity diamond grown by the chemical vapor deposition method. A clear correlation is found between the lifetime and small strain (magnitude <10 −4 ) assessed using birefringence, thanks to the effective absence of impurity traps. A surface recombination model, extended for nonradiative recombination at dislocations due to exciton diffusion, is proposed to explain the temperature-dependent lifetime. Based on the derived radiative lifetime, our model enables the prediction of lifetimes at any temperature as well as the highest achievable internal quantum efficiency of exciton luminescence in diamond, which can generally be applicable to a wide range of materials with high exciton binding energies.

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Section: Sample Characterization -contrasting

confidence: 79%

“…Sample 2 is a commercially available electric-grade sample. The nitrogen impurity concentrations of sample 2 and 3, measured by electron paramagnetic resonance [11], were 0.07 ± 0.02 ppb and 0.05 ± 0.03 ppb, respectively. In all three samples the boron concentrations were lower than 0.2 ppb.…”

Section: Sample Characterization -mentioning

confidence: 98%

Diffusion-related lifetime and quantum efficiency of excitons in diamond

et al. 2020

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“…The calculated spatial distribution of the NV − concentration is shown in Figure 4b, again at t = 0, 1, and 5 ns, obtained by solving eqs 1a−1c. Given that the electron excitation crosssections for NV 0 excitation and NV − → NV 0 conversion are unknown, we estimate them by considering the known exciton capture cross-section of a nitrogen impurity in diamond, 59 σ 0 eh = σ c eh = 3 × 10 −6 μm 2 . We consider v th = 100 μm/ns, τ back = 500 ms, as obtained from the experimental data in Figure 3b, and an initial homogeneous NV − fraction of 0.4 (black line in Figure 4b for t = 0 ns), corresponding to the experimental data in Figure 2e.…”

Section: ■ Pump−probe CL Setupmentioning

confidence: 99%

Electron-Induced State Conversion in Diamond NV Centers Measured with Pump–Probe Cathodoluminescence Spectroscopy

et al. 2019

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Nitrogen-vacancy (NV) centers in diamond are reliable single-photon emitters, with applications in quantum technologies and metrology. Two charge states are known for NV centers: NV 0 and NV -, with the latter being mostly studied due to its long electron spin coherence time. Therefore, control over the charge state of the NV centers is essential. However, an understanding of the dynamics between the different states still remains challenging. Here, conversion from NVto NV 0 due to electron-induced carrier generation is shown. Ultrafast pump-probe cathodoluminescence spectroscopy is presented for the first time, with electron pulses as pump, and laser pulses as probe, to prepare and read out the NV states. The experimental data is explained with a model considering carrier dynamics (0.8 ns), NV 0 spontaneous emission (20 ns) and NV 0 NVback transfer (500 ms). The results provide new insights into the NV -NV 0 conversion dynamics, and into the use of pumpprobe cathodoluminescence as a nanoscale NV characterization tool.Nitrogen-vacancy (NV) centers in diamond are promising elements for quantum optical systems since they are single-photon emitters 1,2 with high photostability, quantum yield and brightness, even at room temperature. 3-6 Moreover, they are integrated inside a widebandgap solid-state host, the diamond lattice, making them robust against decoherence and allowing device scalability. 7-9 NV centers exhibit two different configurational states, the NV 0 state, with a zero-phonon line (ZPL) at 2.156 eV (λ = 575 nm), and the NVstate, with a ZPL at 1.945 eV (λ = 637 nm). 2 NV centers in the NVstate have received most of the attention in the past years since they exhibit a long electron spin coherence time that can be optically manipulated and read out, 9,10 which, together with the characteristics mentioned previously, make them suitable as building blocks for quantum technologies, 9,11,12 nanoscale magnetometry, 13,14 and other applications. 15,16 Typically, synthetically prepared diamonds with NV centers contain both NV 0 and NVstates. Previous work has shown that the state of an NV center can be converted from NVto NV 0 (ionization) and vice versa (recombination). For example, the state of the NV centers can be changed by laser irradiation [17][18][19] , as well as by shifting the Fermi level, either chemically, [20][21][22] or by applying an external voltage 23,24 .

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“…The lifetime recorded from the 100 growth sector in HPHT diamond falls on the blue curve, which indicates that boron is by far the majority impurity in this growth sector. Interestingly Shimomura et al [20] have clearly shown that nitrogen was the majority impurity in a serie of diamond samples with comparable concentrations of residual impurities. This highlights a disparity in the conductivity type, p or n, among the high purity crystals graded as IIa diamonds.…”

Section: Trclmentioning

confidence: 98%

Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

Arnold,

Temgoua,

Barjon

2024

Nanotechnology

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The ultimate purity of synthetic diamond crystals is currently limited by traces of boron and nitrogen. Here we study diamond crystals grown at high-pressure high-temperature, which are made of 3D growth sectors with variable residual impurity contents. The boron concentration is found in the 0.5-6.4 ppb range thanks to continuous cathodoluminescence (cw-CL) analysis. Time-resolved cathodoluminescence (TRCL) experiments complete the impurity analysis with measurements of free exciton lifetimes. From them, we deduced an estimate of the nitrogen concentration at the ppb level, from 0.6 to 30 ppb depending on the growth sectors. We identified n-type, p-type and highly compensated regions, which illustrates the potential of cathodoluminescence as a local probe for qualifying diamond for electronic and quantum applications.

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Quantitative relevance of substitutional impurities to carrier dynamics in diamond

Cited by 11 publications

References 30 publications

Diffusion-related lifetime and quantum efficiency of excitons in diamond

Diffusion-related lifetime and quantum efficiency of excitons in diamond

Electron-Induced State Conversion in Diamond NV Centers Measured with Pump–Probe Cathodoluminescence Spectroscopy

Impurity characterization in diamond for quantum and electronic applications: advances with time-resolved cathodoluminescence

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