Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Abstract

Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy Appl. Phys. Lett. 95, 091910 (2009); 10.1063/1.3222972Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantumwell structure Localization effects on the optical properties of GaAs 1Àx Bi x /GaAs single quantum wells (SQWs), with Bi contents ranging from x ¼ 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature-and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x ¼ 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices. V C 2013 AIP Publishing LLC.

Configuration dependence of band-gap narrowing and localization in diluteGaAs1−xBixalloys

“…On the other hand, both spatial and valence band tail disorder from Bi incorporation had to be invoked to interpret photoluminescence (PL) experiments. The latter gave a broad low-temperature line width and a non-monotonous temperature dependence of both the PL peak position and the PL line width [27][28][29][30][31] , and had to be explained by two-scale disorder models.…”

Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys

“…As discussed in our previous work [15], this thermal quenching effect is an indicative of the presence of localized states. Such behavior is generally observed for mismatch materials such as GaAsN and GaAsBi [14,36,40]. Various procedures are required to understanding the origin of this phenomenon.…”

“…The Bi incorporation in GaAs is mainly perturbing the valence band and adding a carrier localization effect. Disorder effects, i.e., compositional fluctuations together with the Bi clustering within the GaAsBi alloy structure, lead to an increasing density of localized states [13][14][15]. However, the photoluminescence (PL) spectra measured at low temperature are dominated by the recombination of localized carriers trapped at local potential minima [15].…”

“…Epitaxial layers of GaAsBi have demonstrated a reduced temperature dependence of the lasing wavelength, which makes them promising for the manufacture of laser diodes and semiconductor optical amplifiers that do not require Peltier cooling [10]. Recently, a large number of reports on detailed optical characterizations of GaAsBi were published [7,14,[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. They include temperature dependence of PL, time-resolved PL, Photomodulated transmittance and photoreflectance (PR).…”

Two‐energy‐scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)

“…This results in peculiar photoluminescence (PL) characteristics. In particular, the temperature dependence of the PL peak energy exhibits the so-called S-shape [5,6], while the corresponding temperature-dependent PL linewidth displays an abrupt increase within a narrow temperature range [7]. Furthermore, the PL intensity dramatically decreases with increasing temperature [7].…”