Quantitative two-dimensional profiling of 0.35 μm transistors with lightly doped drain structures

Abstract

Articles you may be interested inNoncontact-mode scanning capacitance force microscopy towards quantitative two-dimensional carrier profiling on semiconductor devices Appl. Phys. Lett. 90, 083101 (2007); 10.1063/1.2454728 Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method Two-dimensional dopant profile of 0.2 μm metal-oxide-semiconductor field effect transistors Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modelingWe report the first quantitative experimental two-dimensional ͑2D͒ dopant profile measurement of 0.35 m transistors with lightly doped drain structures and its comparison with theoretical simulation. Experimentally, the 2D dopant profile is determined using dopant-selective etching followed by atomic force microscopy imaging. These results show excellent quantitative agreement with recent theoretical profile simulation for both n-and p-channel metal-oxide-semiconductor transistors.