Quantized Hall Resistance Measurements

Kawaji,; Nagashima,; Kikuchi,; Wakabayashi,; Inagaki,; Kinoshita,; Yoshihiro,; Yamanouchi,

doi:10.1109/cpem.1988.671305

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…In a direct comparison Hartland et al [35] found that the difference between the QHR in the two device types was smaller than 3.5 parts in 10 10 . However, at about the same time, several other groups [36,37,38] reported anomalous values of the QHR measured in a particular Si-MOSFET device. The authors claimed to see differences in R H up to several parts in 10 7 despite the absence of any measured dissipation within the experimental resolution.…”

Section: Universality Of the Qhrmentioning

confidence: 96%

The quantum Hall effect as an electrical resistance standard

2001

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The quantum Hall effect (QHE) provides an invariant reference for resistance linked to natural constants. It is used worldwide to maintain and compare the unit of resistance. The reproducibility reached today is almost two orders of magnitude better than the uncertainty of the determination of the ohm in the International System of Units SI. This article is a summary of a recently published review article which focuses mainly on the aspects of the QHE relevant for its metrological application.

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Section: Universality Of the Qhrmentioning

confidence: 96%

The quantum Hall effect as an electrical resistance standard

2001

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“…In 1988, however, Kawaji et ai. [2] reported measurements of flat plateaus in Si-MOSFETs that were offset from the GaAs heterostructure value by 0.16 ppm. These samples satisfied all known criteria for standards quality devices including having Pxr values smaller than 0.015 ppm of the Hall resistance, a value not expected to shift the plateau by more than 0.003 ppm On the other hand, Delahaye and Bournaud [8) reported no anomalies in their examination of a similar Sony sample.…”

Section: Offset Plateausmentioning

confidence: 99%

“…In contrast to the Josephson voltage steps which have no observed material-dependent corrections, the quantum Hall plateaus are not only temperature and current dependent [1], but also are not necessarilyflat even when no significant longitudinal resistance is measured [2][3]. Furthermore, imperfections in the contacts can lead to contact-dependent corrections to the Hall resistance [4].…”

Section: Introductionmentioning

confidence: 99%