Quantum (5 5 12)Si Nanowire 300K MOSFET

Abstract

A nanowire (NW) device in parallel with a normal nMOSFET is fabricated with a poly-Si planar CMOS process on (5 5 12)Si. With a unit cell of 5.35 nm, this plane has the largest stable atomically flat Si surface. When output current Isd flows from source S to drain D along <110>, the device has 15 positive spikes at integer multiples of 154 mV, all at 300K and zero magnetic field. Ids has only 9 positive and 2 negative spikes. The positive spikes in Isd and Ids are due to parabolic confinement of elongated q-dots in the NWs near D. Both Isd and Ids show missing spikes and onedimensional artificial atom behavior. The negative spikes appear to be Kronig-Penney effects on the NWs. The NWs and q-dots have estimated widths near 2 nm and Line Edge Roughness (LER) less than 0.1 nm due to the crystal-lattice precision of the surface. Perspective and IntroductionThere have recently been a number of discussions of the future of CMOS and other modern nanoelectronic devices when the smallest meaningful dimensions (SMDs) are reduced to the "single-digit" true nanometer scale below 10 nm. For example, significant attention has been paid to spin-based logic which predicts that up and down spins can move in an electric field in opposite directions along opposite edges of a nanowire, sometimes even in a zero magnetic field (1). A related example involves the storage and dissociation of excitons in parallel chains of semiconducting polymers (2). Quantum dots (q-dots) also have a wide range of highly unusual properties (3). Another surprising effect involves a circuit that results in the violation of Kirchoff's laws where series resistors no longer add to each other (4). All of the above are generally only observed within a few degrees of absolute zero, and they typically occur only when one or more of the device dimensions are of the same magnitude as interatomic distances or the electron wavelength (5). We discuss here a room temperature nanowire device made with standard CMOS technology that has several perplexing anomalies that appear to fall into one or more of the above categories. However, in this work we limit our working model to well known quantum effects involving parabolic confinement of elongated Si q-dots (6), the electron reflected branch of the Kronig-Penney model (6), and evidence for the existence of one dimensional (1D) or two dimensional (2D) artificial atoms (7).

On the Roughness Analysis of High-Index Silicon Wafers Using KOH-IPA Solutions

“…Finally, in Ref. 15 we discuss the effect of a room temperature nanowire device (quantum confined charge) appearing along the channel transistors fabricated on (5 5 12) silicon wafers.…”