Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer

Bouchama, Idris; Boudour, Samah; Bouarissa, N.; Rouabah, Z.

doi:10.1016/j.optmat.2017.05.056

“…Furthermore, the duration of α-In 2 Se 3 PSCs was highly better than that of PEDOT:PSS-based devices . In addiction, α-In 2 Se 3 layers had similar applications in CuIn 1– x Ga x Se 2 (CIGS) thin-film solar cells …”

Section: Advanced Applicationsmentioning

confidence: 94%

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Li

¹

,

Li

²

,

Niu

³

et al. 2021

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Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.

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“…Third, unlike black phosphorus which is also a direct bandgap 2D material, thin In 2 Se 3 flakes are very stable in air, which is very important for practical applications. Recently, there has been pioneering work on the use of 2D In 2 Se 3 in piezoelectronics [24, 25], optoelectronics [26], and photovoltaics [27]. We note that these reported 2D In 2 Se 3 materials have small domain sizes (from a few to tens of micrometers, Figure 1(a) and ) [28–30].…”

Section: Introductionmentioning

confidence: 99%

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In ₂ Se ₃ for Flexible Broadband Photodetectors

Tang

¹

,

Teng

²

,

Luo

³

et al. 2019

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The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.

show abstract

“…Third, unlike black phosphorus which is also a direct bandgap 2D material, thin In 2 Se 3 flakes are very stable in air, which is very important for practical applications. Recently, there has been pioneering work on the use of 2D In 2 Se 3 in piezoelectronics [24,25], optoelectronics [26], and photovoltaics [27]. We note that these reported 2D In 2 Se 3 materials have small domain sizes (from a few to tens of micrometers, Figure 1(a) and Table S1) [28][29][30].…”

Section: Introductionmentioning

confidence: 90%

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In₂Se₃ for Flexible Broadband Photodetectors

Tang

¹

,

Teng

²

,

Luo

³

et al. 2019

View full text Add to dashboard Cite

The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.

show abstract

Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer

Cited by 12 publications

References 20 publications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In ₂ Se ₃ for Flexible Broadband Photodetectors

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In₂Se₃ for Flexible Broadband Photodetectors

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Quantum and conversion efficiencies optimization of superstrate CIGS thin-films solar cells using In2Se3 buffer layer

Cited by 12 publications

References 20 publications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In 2 Se 3 for Flexible Broadband Photodetectors

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

Contact Info

Product

Resources

About

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In ₂ Se ₃ for Flexible Broadband Photodetectors

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In₂Se₃ for Flexible Broadband Photodetectors