Quantum Annealing Machine based on Floating Gate Array

Quantum Annealing Machines Based on Semiconductor Nanostructures

“…In Ref. 35 , numerical estimations based on 1D capacitance network model were carried out. Those calculations showed that the smaller size of FGs induces higher temperature operations as expected.…”

“…In Ref. 35 , Technology CAD(TCAD) tools were also used and it was shown that the response speed of the FGs are in order of 10 −11 s for L = W = 15 nm FGs. Here, let us check the effect of the next-nearest coupling by calculating the U h , which corresponds to the height of the charging energy U h and is calculated by the coefficient of n Gi in Eq.…”

“…65 and Ref. 35 , we roughly estimated the coherence time of the charge qubit based on the spin-boson model 68 . In Ref.…”

“…Thus, although charge qubits have generally less coherence time than spin qubits, here we rather consider a charge qubit system by reviewing the proposal of a QAM using the conventional NAND flash memory consisting of floating gate (FG) cells in Ref. 35 , and we extend the structure of a qubit to a coupled quantum dot (QD) system. Coherent control of charge qubits using semiconductor QDs has been demonstrated in Ref.…”

“…In Ref 35 , we have shown that the FG array in 2D NAND flash memories can constitute a QAM by using the capacitive coupling between neighboring cells. In this setup, the physical interactions are limited to the neighboring qubits.…”