Quantum anomalous Hall effect and giant Rashba spin-orbit splitting in graphene system co-doped with boron and 5d transition-metal atoms

Deng, Xinzhou; Yang, Hualing; Qi, Shifei; Xu, Xin; Qiao, Zhenhua

doi:10.1007/s11467-018-0806-y

Cited by 7 publications

(3 citation statements)

References 56 publications

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“…The interplay of symmetry, spin-orbit coupling, and magnetic structure together helps realize various topological phases ranging from quantum Hall effect to topological superconductor. The quantum anomalous Hall effect or magnetic topological insulator corresponds to the quantum Hall effect without applying external magnetic field [1][2][3], and exhibits immense application potential in dissipationless quantum electronics [4][5][6][7][8]. Typically, an element possessing high spin-orbit coupling is usually magnetically inactive, and vice versa.…”

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confidence: 99%

“…Therefore, the magnetic topological insulator rarely exists in natural materials. Theoretically, many attempts have been implemented to make it realistic in a single system by doping/adsorption [8][9][10][11][12][13][14][15][16][17][18], chemical functionalization [19,20], and heterostructure schemes [21][22][23][24][25]. However, thus far, experimentally, the quantum anomalous Hall effect has been only observed in magnetic element-doped topological insulators at very low temperatures [26][27][28].…”

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Quantum anomalous Hall effect by coupling heavy atomic layers with CrI3

et al. 2019

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We explored the possibility of realizing quantum anomalous Hall effect by placing heavy-element atomic layer on top of monolayer CrI3 with a natural cleavage surface and broken time-reversal symmetry. We showed that CrI3/X (X = Bi, Sb, or As) systems can open up a sizable bulk gap to harbour quantum anomalous Hall effect, e.g., CrI3/Bi is a natural magnetic insulator with a bulk gap of 30 meV, which can be further enlarged via strain engineering or adjusting spin orientations. We also found that the ferromagnetic properties (magnetic anisotropic energy and Curie temperature) of pristine CrI3 can be further improved due to the presence of heavy atomic layers, and the spin orientation can be utilized as a useful knob to tune the band structure and Fermi level of CrI3/Bi system. The topological nature, together with the enhanced ferromagnetism, can unlock new potential applications for CrI3-based materials in spintronics and electronics.

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Quantum anomalous Hall effect by coupling heavy atomic layers with CrI3

et al. 2019

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“…In 2019, Li et al studied the co-doping of Mo and N on the magnetic local spin of two-dimensional SiC and found that Mo atoms can act as excellent local spin donor atoms in two-dimensional SiC [22]. In 2018, Deng et al found that with the destruction of spatial symmetry in a matrix in two-dimensional materials, dopants will produce new quantum effects due to local magnetic anisotropy [23]. Baierle studied the adsorption of alkali metals (Li, K, and Na) and alkaline earth metals (Be, Mg, and Ca) on monolayer SiC using density functional theory, where the adsorbed atoms give rise to new and localized electronic levels [24].…”

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Effect of Alkaline Earth Metals Doping on the Electronic Structure, Magnetic and Optical Properties of g-SiC Monolayer System by First Principles Calculation

Wei

Shen

et al. 2022

J. Phys.: Conf. Ser.

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The band structure, electronic, magnetic, and optical properties of g-SiC monolayers doped with alkaline earth metals (Be, Mg, Ca, Sr, and Ba) are calculated by means of first principles based on density functional theory. Although the intrinsic g-SiC monolayer is nonmagnetic, it shows magnetic properties after doping with alkaline earth metals. The magnetic moments are, in the order of the above-named dopants, 1.583 μ B, 1817 μ B, 2.000 μ B, 2.000 μ B, and 2.000 μ B. Charge transfer and the net spin charge occur mainly between the dopant atom and surrounding C atoms. The results show that the conductivity of g-SiC can be greatly improved by doping with alkaline earth metals, a technique that can be applied to the field of semiconductor spintronics. High absorption peaks in the ultraviolet indicate that the material has potential applications in UV optoelectronic devices.

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