We present a tunnel spectroscopy study of single PbS Quantum Dots (QDs) as function of temperature and gate voltage. Three distinct signatures of strong electron-phonon coupling are observed in the Electron Tunneling Spectrum (ETS) of these QDs. In the shell-filling regime, the 8× degeneracy of the electronic levels is lifted by the Coulomb interactions and allows the observation of phonon sub-bands that result from the emission of optical phonons. At low bias, a gap is observed in the ETS that cannot be closed with the gate voltage, which is a distinguishing feature of the Franck-Condon (FC) blockade. From the data, a Huang-Rhys factor in the range S ∼ 1.7 − 2.5 is obtained. Finally, in the shell tunneling regime, the optical phonons appear in the inelastic ETS d 2 I/dV 2 .PACS numbers: 73.21.-b, 73.22.-f, 73.23.-b, 71.38.-k Semiconducting nanocrystals are characterized by discrete electronic levels with size-tunable energies[1], giving these QDs unique electronic properties [2][3][4].While optical spectroscopy is usually used to characterize the properties of QDs, ETS is a more relevant characterization when the goal is to incorporate the QDs into electron conducting devices such as fieldeffect transistors [3] or light emitting diodes [5]. Indeed, the coupling of a QD to electrodes or neighboring QDs, in presence of Coulomb and electron-phonon interactions, strongly alters their electronic spectrum and, consequently, their electronic transmission coefficient.In this work, we have studied the ETS of PbS QDs. They are characterized by strong quantum confinement and a size-tunable band gap on a wide energy range, which is of interest for solar cells [6-9] and infra-red detectors [10].After synthesis of the PbS QDs, as described in Ref. [11,12] and shown on the TEM picture Fig. 1a., the organic ligands at their surface are replaced by short inorganic ligands, S 2− [10, 13], to reduce the thickness of the insulating tunnel barrier between the QD and the electrodes.To measure the ETS as function of temperature and carrier filling, we employed on-chip tunneling spectroscopy where the nanoparticle is trapped within a nanogap, i.e. two electrodes separated by a distance of about 10 nm, deposited on a p-doped silicon substrate used as a back-gate covered by a silicon oxide layer 300 nm thick. While Scanning Tunneling Microscopy (STM) has already been employed to study the ETS of several colloidal QDs systems[14-22], on-chip tunneling spectroscopy has been only employed a few times [23][24][25]. This method presents several advantages though. The junctions are highly stable at low temperature, which FIG. 1. a) TEM image of PbS QDs. b) SEM image of ∼ 10 nm spaced electrodes in which a QD has been deposited. c) QDs are projected onto the chip-circuit in high vacuum using a fast pulsed valve. d) After each projection, the tunnel current is measured (VDrain = 0.1 V, VGate = 0 V, T=300 K). When it exceeds the threshold, the projection stops.allows high resolution measurements of the elastic and inelastic ETS. A back gate ca...