Modulation-doped CdTe quantum wells (QWs) with Cd0.7Mg0.3Te barriers were studied by photoluminescence
(PL)
and far-infrared Fourier spectroscopy under a magnetic field at 4.2
K and by Raman spectroscopy at room temperature. Two samples were
tested: a sample which contained ten QWs (MQW) and a sample with one
QW (SQW). The width of each QW was equal to 20 nm, and each of them
was modulation-doped with iodine donors introduced in a 4 nm thick
layer. The concentration of donors in each doped layer was nominally
identical, but the thickness of the spacer in SQW and MQW samples
was 20 and 10 nm, respectively. This resulted in a two times higher
electron concentration per well in the MQW sample than in the SQW
sample. We observed differences in PL from the two samples: the energy
range of PL was different, and one observed phonon replicas in MQW
which were absent in the SQW sample. An analysis of oscillations of
the PL intensity as a function of magnetic field indicated that PL
resulted from the recombination of free electrons in the conduction
band with free or localized holes in the case of SQW and MQW samples,
respectively.