Quantum cascade lasers emitting near 2.6 μm

Cathabard, O.; Teissier, R.; Devenson, J.; Moreno, J. C.; Баранов, А. Н.

doi:10.1063/1.3385778

Cited by 138 publications

(82 citation statements)

References 14 publications

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“…For that reason, there has been much attentiveness and huge progress done in the material growth and device invention of antimonide semiconductor heterostructures, such as field effect transistors [4], semiconductor lasers [5], and infrared detectors [6]. Although up-to-date technical advancements have allowed high quality lattice matched GaSb epitaxy on native substrate, GaAs substrate are likeable for many applications.…”

Section: Introductionmentioning

confidence: 99%

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia¹,

Kubiszyn²,

Michalczewski³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10 17 cm -3 . In addition, the reduction of GaSb lattice parameter with Be doping was studied.

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Section: Introductionmentioning

confidence: 99%

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Benyahia¹,

Kubiszyn²,

Michalczewski³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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“…Lattice−mismatched epitaxy of Sb−based materials on GaAs and Si substrates has attracted consider− able attention due to the numerous advances in optoelec− tronic devices that can be enabled, including field effect transistors [6], infrared detectors [7], and semiconductor lasers [8]. While recent technical advancement has enabled high quality lattice matched GaSb epitaxy on native sub− strates, GaAs substrates are desirable for many applications due to its high quality with semi−insulating, large area, favourable thermal properties, excellent n and p−type ohmic contacts and low cost.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, metamorphic buffer layer approach ex− hibits several deficiencies such as the poor thermal and elec− trical conductivity, and the material degradation through the presence of threading dislocations. Recently, another tech− nology, interfacial misfit dislocation (IMF) growth mode was developed [14,15], where the strain is relieved instanta− neously at the mismatched heterointerface by the formation of a two−dimensional (2 D), periodic IMF arrays comprised of pure−edge (90°) dislocations along both [110] and [1][2][3][4][5][6][7][8][9][10] [14]. This growth mode offers a "buffer−free" approach with low threading dislocation density (~10 5 cm -2 ) [15].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Benyahia

Kubiszyn

Michalczewski

et al. 2016

Opto-Electronics Review

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Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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“…2 It is now shown to cover a wide range of the electromagnetic spectrum from near-infrared to midterahertz. 3,4 In virtue of such a wide coverage of wavelengths, QCLs have become attractive sources for spectroscopy, medical and biosensing, remote gas sensing, free-space communication, and applications in defense security countermeasures. Several of these application areas necessitate high power, good beam quality, efficient thermal dissipation, and high wall plug efficiency (WPE).…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency

et al. 2014

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Abstract. Together with the optimal basic design, buried heterostructure quantum cascade laser (BH-QCL) with semi-insulating regrowth offers a unique possibility to achieve an effective thermal dissipation and lateral single mode. We demonstrate here the realization of BH-QCLs with a single-step regrowth of highly resistive (>1 × 10 8 ohm · cm) semi-insulating InP:Fe in <45 min for the first time in a flexible hydride vapor phase epitaxy process for burying ridges etched down to 10 to 15 μm depth, both with and without mask overhang. The fabricated BH-QCLs emitting at ∼4.7 and ∼5.5 μm were characterized. 2-mm-long 5.5-μm lasers with a ridge width of 17 to 22 μm, regrown with mask overhang, exhibited no leakage current. Large width and high doping in the structure did not permit high current density for continuous wave (CW) operation. 5-mm-long 4.7-μm BH-QCLs of ridge widths varying from 6 to 14 μm regrown without mask overhang, besides being spatially monomode, TM 00 , exhibited wall plug efficiency (WPE) of ∼8 to 9% with an output power of 1.5 to 2.5 W at room temperature and under CW operation. Thus, we demonstrate a quick, flexible, and single-step regrowth process with good planarization for realizing buried QCLs leading to monomode, high power, and high WPE. Keywords: buried heterostructure quantum cascade lasers; high-power, high wall plug efficiency quantum cascade laser; hydride vapor phase epitaxy regrowth.Paper 140564P

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Quantum cascade lasers emitting near 2.6 μm

Cited by 138 publications

References 14 publications

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Demonstration of a quick process to achieve buried heterostructure quantum cascade laser leading to high power and wall plug efficiency

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