Quantum cascade lasers with Y_2O_3 insulation layer operating at 81 µm

Abstract

SiO is a commonly used insulation layer for QCLs but has high absorption peak around 8 to 10 µm. Instead of SiO, we used YO as an insulation layer for DC-QCL and successfully demonstrated lasing operation at the wavelength around 8.1 µm. We also showed 2D numerical analysis on the absorption coefficient of our DC-QCL structure with various parameters such as insulating materials, waveguide width, and mesa angle.

Low-Loss Regrowth-Free Long Wavelength Quantum Cascade Lasers

“…2a. These results are also in agreement with a recent study [5] which indicates that the loss of Si 3 N 4 passivated lasers strongly depends on cavity width, compared to low-loss Y 2 O 3 passivated ones. Fig.…”

“…In previous works, low dissipation DFB devices with power consumption comparable to BH devices using AlN passivation were demonstrated [3], impact of optical constants and thermal conductivities of SiO 2 , Si 3 N 4 and TiO 2 on the passivation of quantum cascade lasers were theoretically compared, and SiO 2 for short wavelengths and TiO 2 for long wavelengths into the midwave were recommended [4]. The feasibility of 15 μm wide, 3 mm long double channel pulsed QCLs, insulated by e-beam evaporated Y 2 O 3 were demonstrated with reports of L-I-V curves, and it was concluded that SiO 2 and Si 3 N 4 have significant absorption between 8 to 10 μm [5]. In another work, they studied the propagation of electromagnetic waves in various dielectrics to calculate absorption loss and optical confinement of QCL waveguides insulated with SiO 2 , Si 3 N 4 , As 2 S 3 , and Ge 0.25 Se 0.75 , using the finite element method [6].…”

Генерация квантово-каскадных лазеров на длине волны излучения 9.6 mum

“…Гетероструктура ККЛ выращена в ООО " Коннектор Оптикс" на промышленной установке МПЭ Riber 49, оснащенной твердотельным источником мышьяка крекерного типа и источниками марки ABI 1000 для создания потоков галлия и индия [23,24]. Подложка InP ориентацией (001) легирована серой до уровня 3 [18,28], а также МОГФЭ [21]. Рост тока с 500 до 665 mA приводит к последовательному увеличению интенсивности электролюминесценции и сдвигу максимума излучения в коротковолновую область (с 9.7 до 9.6 µm).…”

“…В качестве пассивации боковых стенок мезы для длинноволновых ККЛ используется нитрид кремния Si 3 N 4 , в то время как на длинах волн менее 6 µm применяется оксид кремния SiO 2 . В свою очередь, диоксид титана TiO 2 демонстрирует наименьшее поглощение на длинах волн 8−11 µm в сравнении с оксидом и нитридом кремния[27,28]. Поэтому в настоящей работе методом магнетронного распыления последовательно наносились слои TiO 2 /SiO 2 с толщинами 40 и 140 nm соответственно.…”

Improving the Luminescent Properties of Atomic Layer Deposition Eu:Y2O3 Thin Films through Optimized Thermal Annealing

“…Extremely long spin coherence times (6 h) have, for example, been measured at cryogenic temperatures with Er:Y 2 SiO 5 bulk crystals as well as all optical spin coherent control in Eu:Y 2 O 3 nanoparticles. In contrast, thin‐film technologies are less explored, although they could potentially open the way for on‐chip integration with other devices such as light sources or detectors . To achieve that, a key requirement is the growth of thin crystalline films of RE‐doped oxides with low levels of impurities and defects.…”