Quantum charge and spin pumping in monolayer phosphorene

Non-equilibrium spin-transport properties of Co/phosphorene/Co MTJ with non-collinear electrodes under mechanical bending

“…For example, through experiments it has demonstrated that the phosphorene-based spin-valve has a spin relaxation time of up to 4 ns, with a spin relaxation length exceeding 6 μm at room temperature. 35 Besides, the spin-pumping effect in monolayer phosphorene, 32 the gate-voltage-induced giant spin Seebeck effect, 36 and magnetically ordered edges in phosphorene nanoribbons 37 have been proposed in recent theoretical studies. Usually, phosphorene can form a magnetic tunneling junction (MTJ) with magnetic metals, leading to electric spin-injection into phosphorene.…”

“…27 These outstanding properties make phosphorene very attractive in flexible thin-film electronics. [28][29][30][31][32][33][34] The pumped currents in monolayer phosphorene can be increased by up to two orders of magnitude under uniaxial strain. 32 The flexoelectric coefficients of phosphorene can be four orders of magnitude larger than those of graphene.…”

“…[28][29][30][31][32][33][34] The pumped currents in monolayer phosphorene can be increased by up to two orders of magnitude under uniaxial strain. 32 The flexoelectric coefficients of phosphorene can be four orders of magnitude larger than those of graphene. 34 Phosphorene has also shown great potential in spintronics.…”

Single-parameter quantum valley pumping in graphene with topological line defect

“…The dc pumped current is sinusoidal dependence on the phase difference ϕ between the pumping potentials and adopts its maximum(minimum) value as ϕ = π/2(0). The dc currents in this phenomenon comes from the interfere of the electronic waves due to the phase difference between ac gate voltages [18]. The theoretical approach was proposed by Thouless [19] and realized in a quantum dot [20].…”

“…For the nature SIS breaking system, the currents can be pumped out with only a single ac gate potential [15,16,17]. More commonly, a quantum pumping involves two or more ac gate potentials with a definite phase difference to break the SIS of the system [18,19,20]. The dc pumped current is sinusoidal dependence on the phase difference ϕ between the pumping potentials and adopts its maximum(minimum) value as ϕ = π/2(0).…”