Quantum coherence modulation in bismuth selenide topological insulator thin film by ion irradiation

Abhirami, S.; Amaladass, E. P.; Saravanan, K.; David, C.; Amirthapandian, S.; Sarguna, R. M.; Mani, Awadhesh

doi:10.1016/j.jallcom.2021.161145

Cited by 8 publications

(17 citation statements)

References 49 publications

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“…studied the effect of 600 KeV Sb + ion implantation at 45° oblique incidence which results in a change in transport properties from parabolic magnetoresistance to linear magnetoresistance due to mobility fluctuations. [ 60 ] The present work indicates an enhancement of saturation magnetization 0.022 emu mm −3 for the pristine sample to 0.056 emu mm −3 when the ion fluence increases to 1 × 10 15 ions cm −2 . Therefore the as‐prepared Au implanted Bi 2 Se 3 TIs can be employed as an efficient candidate for spintronic applications.…”

Section: Resultsmentioning

confidence: 56%

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

Das,

Sahoo,

Das

et al. 2023

Adv Quantum Tech

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Breaking time‐reversal symmetry through magnetic impurities has been a useful strategy for achieving exotic physical phenomena in topological insulators for a long time. In contrast, reports on achieving ferromagnetism in topological insulators by introducing non‐magnetic elements are very scarce. The present article illustrates Au ion implantation as an alternative tool to study the structural and magnetic properties in the Bi2Se3 nanocrystals grown by the chemical vapor deposition. The as‐grown pristine Bi2Se3 exhibits triangular and hexagonal plate‐like morphology, which undergoes structural distortion with increased Au ions. The room temperature Raman spectra show defect‐induced phonon softening with ion fluence. The non‐magnetic Bi2Se3 exhibit room temperature ferromagnetic hysteresis that originates from Bi vacancies which is verified from the density functional theory (DFT)calculations. The incorporation of Au ions initially decreases the magnetic moment up to the fluence 1 × 1014 ions cm−2 and enhances at higher fluences due to the formation of Au nanoclusters. The experimental and DFT results suggest a competition between the Se “4p” states and Au “5d” states for the non‐monotonic behavior of magnetic properties. The present work on Au intercalation in Bi2Se3 can pave the way to design artificial topological insulator devices for potential technological applications for future spintronics and quantum computations.

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Section: Resultsmentioning

confidence: 56%

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

Das,

Sahoo,

Das

et al. 2023

Adv Quantum Tech

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“…The group also carried out Cu implantation in Sb 2 Te 3 films 77 and observed the damage caused to the surface through atomic force microscopy studies and structural changes through X-ray diffraction studies. 600 keV Sb ion irradiation in Bi 2 Se 3 thin films carried out by Abhirami et al 74 was found to cause significant damage to the film, as observed in the broad XRD and Raman spectra, which was found to be reversible through annealing at 350 °C in a Se environment. There was no significant change in the carrier density after annealing, but the significant modifications in the magnetotransport behaviour reported in the work are reviewed in Section 4.2.1.…”

Section: Carrier Density Tuning In Bi-based Topological Insulators By...mentioning

confidence: 93%

“…The WAL signature is used as a tool to study changes in TI materials owing to particle irradiation in some important works in the field. 45,74,101…”

Section: Modulation Of Topological Surface States In Bi-based Topolog...mentioning

confidence: 99%

The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review

Amaladass,

Amirthapandian

et al. 2024

Phys. Chem. Chem. Phys.

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“…Bismuth selenide (Bi 2 Se 3 ) is a layered narrow bandgap semiconductor, widely used in optical recording systems, photochemical devices, battery electrodes, thermoelectric devices, spintronics, and quantum computing. , It has also been widely studied and proven for its applicability. This material belongs to the recently discovered class of three-dimensional topological insulators and exhibits a conduction state with a nondegenerate spin protected by time-reversal symmetry .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

Cho

Lee

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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High-quality Bi2Se3 thin films with topological insulating properties at room temperature have recently attracted much attention as one of the promising materials for realizing innovative electronic and optoelectronic devices. Here, we report the high crystallinity growth of Bi2Se3 thin films on a patterned sapphire substrate (PSS) by using a vapor-phase transport deposition with minimizing thermal dissociation of Se atoms vaporized in Bi2Se3 powder. This PSS not only reduces the large dislocation of heterogeneously grown Bi2Se3 on a sapphire substrate but also induces enhanced light absorption in the visible to near-infrared (IR) ranges compared to Bi2Se3 on planar sapphire substrates. Thus, the Bi2Se3 thin film laterally grown on the PSS reveals uniform surface properties and high crystallinity in the rhombohedral lattice phase with a full width at half maximum of 0.06 ° for the XRD (003) peak. Also, the photoresponse of the fabricated IR conversion device using Bi2Se3/PSS heterostructure exhibits excellent performance and high reliability with no degradation after continuous switching. As a result, the device constructed with the Bi2Se3/PSS exhibits one order of magnitude higher NIR induced-photocurrent and 1–2 orders of magnitude faster photo-switching than that with Bi2Se3/Al2O3. Such an enhancement in the device performance of Bi2Se3/PSS is confirmed by the increased absorption spectra in visible and NIR ranges and the improved light absorption distribution.

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Quantum coherence modulation in bismuth selenide topological insulator thin film by ion irradiation

Cited by 8 publications

References 49 publications

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates

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Quantum coherence modulation in bismuth selenide topological insulator thin film by ion irradiation

Cited by 8 publications

References 49 publications

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi2Se3 Nanocrystals for Spintronic Applications

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi2Se3 Nanocrystals for Spintronic Applications

The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

Contact Info

Product

Resources

About

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

Defect Induced Unconventional Ferromagnetism in Au Intercalated Bi₂Se₃ Nanocrystals for Spintronic Applications

Enhanced Photoresponse of High Crystalline Bi₂Se₃ Thin-Films Using Patterned Substrates