Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In<sub>2</sub>O<sub>3</sub> Transistors

Isakov, Ivan; Faber, Hendrik; Mottram, Alexander D.; Das, Satyajit; Grell, Max; Regoutz, Anna; Kilmurray, Rebecca; McLachlan, Martyn A.; Payne, D. J.; Anthopoulos, Thomas D.

doi:10.1002/aelm.202000682

Cited by 24 publications

(19 citation statements)

References 46 publications

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“…In order to derive the conduction band offset (CBO), the band gap ( E g ) information is needed, which can be determined from the O 1s plasmon loss spectrum features. − The E g of TiO 2 and ZrO 2 are determined to be 3.72 and 5.39 eV as shown in Figure (g,h), respectively, consistent with the values in previous reports . The conduction band offset (CBO) can then be derived from the obtained VBO and E g according to the equation: …”

Section: Resultssupporting

confidence: 72%

“…(2) The slightly increased RMS may be related to the interface tension/stress changes between TiO 2 /ZrO 2 upon different ZrO 2 thickness, which is due to the atomic mismatch of ZrO 2 and TiO 2 . A similar increase in RMS can also be observed when growing a thicker In 2 O 3 channel on the SiO 2 substrates . (3) As longer deposition time is needed for thicker ZrO 2 , an in situ annealing may also cause some morphology changes and lead to the slight RMS increase.…”

Section: Resultsmentioning

confidence: 57%

“…A similar increase in RMS can also be observed when growing a thicker In 2 O 3 channel on the SiO 2 substrates. 64 (3) As longer deposition time is needed for thicker ZrO 2 , an in situ annealing may also cause some morphology changes and lead to the slight RMS increase. Further investigations are needed to confirm the possible morphological growth mechanism.…”

Section: Resultsmentioning

confidence: 99%

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Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Zhang

Jia

Sales

et al. 2021

ACS Appl. Electron. Mater.

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In the present work, the impact of ZrO 2 gate dielectric thickness on the electrical performance of TiO 2 thin film transistors (TFTs) is systematically investigated. Exhaustive electrical measurements on TFTs, metal−insulator−metal, and metal−oxide−semiconductor capacitors are carried out with varying ZrO 2 dielectrics of different thicknesses. It is found that the ZrO 2 possesses an outstanding thickness scalability, providing reliable dielectric properties under an ultrathin physical thickness of 5 nm, while further reduction in ZrO 2 thickness would lead to a breakdown of the TFTs, indicating the physical limitations for the ultrathin ZrO 2 dielectrics. The TiO 2 TFTs with the 5 nm-thick ZrO 2 dielectric exhibit an enhanced electrical performance, including a high on/off current ratio (I on /I off ) of 7.7 × 10 8 , a nearly ideal subthreshold (SS) of 72 mV/dec, and a high electron mobility (μ eff ) of 5.74 cm 2 •V −1 •s −1 under an ultralow voltage of 2 V. Such prominent electrical characteristics with a battery-drivable low-voltage operation prove the suitability of the TiO 2 TFTs for Internet of Things applications. This comprehensive study, revealing the behaviors of leakage current, oxide capacitance, oxide charges, and interface traps with respect to the ZrO 2 thickness, sheds light on the quality and scalability of the ZrO 2 dielectrics that can be extended to other channel materials, and also offers a framework for evaluating the material quality of other dielectrics. Furthermore, from a material point of view, the underlying physical reasons for the excellent ZrO 2 thickness scalability are believed to be (1) the smooth surfaces of TiO 2 and ZrO 2 , (2) the well-structured ZrO 2 without detectable oxygen-related defects, and (3) the large conduction band offset between ZrO 2 and TiO 2 . Overall, this study not only shows that the TiO 2 TFTs hold great potential to empower future IoT applications, but also provides important guidance regarding dielectric scaling and quality evaluation in the nanometer scale.

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Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 57%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Zhang

Jia

Sales

et al. 2021

ACS Appl. Electron. Mater.

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“…These smooth surfaces could contribute to the high mobility and stability of transistor by suppressing interfacial scattering and charge trapping. [18,38] Figure 1f shows the height profile of a printed ITO coffee-ring transistor, with an ITO channel thickness of ≤10 nm between the ITO S/D electrodes. As the charge carrier concentration and resistivity in solution-processed ITO films are thicknessdependent, this means that the ultrathin (<10 nm) ITO film can work as excellent semiconducting channel materials in transistors, instead of its conventional role as electrodes with larger film thickness.…”

Section: Resultsmentioning

confidence: 99%

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Liang

Wang

Ren

et al. 2022

Advanced Optical Materials

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based on conventional image sensors and data processing systems faces severe challenges in terms of efficiency and power consumption due to the physically separated memory and central processing unit (CPU), which are particularly important in the era of artificial intelligence (AI). [4,6] Fortunately, optoelectronic synapses are neuromorphic computing devices that rationally incorporate optical sensing, processing, and memory functions, [7][8][9][10] thereby enabling artificial visual systems to be realized with low power consumption and low mutual interference. [11][12][13] Optoelectronic synaptic transistors are one type of optoelectronic synapses that are widely applied in artificial visual systems due to their linear synaptic plasticity, configurable electrical modulation, and nondestructive operations. [14] Meanwhile, their multi-terminal device structure naturally permits the construction of large-area, high-density synaptic transistor arrays, capable of precise pixel addressing without sneak-path leakages for image perception and processing. [8,13,15] Despite these advantages, optoelectronic synaptic transistors with nanomaterials and/or nanostructured channels are often reliant on vacuum-based top-down semiconductor fabrication techniques, which are characterized by complicated processes, low efficiency, and high cost. [15,16] Printable oxide transistors have emerged as important optoelectronic synaptic devices to emulate the human visual cognitive system by integrating both photo-sensing and visual perception functions. However, the inferior electrical performance and low pixel density of printed oxide synaptic transistors impede their implementation of complex neuromorphic computing. Herein, a printable all-oxide optoelectronic synaptic transistor array based on a modified coffee-ring structure of indium tin oxide (ITO) is reported. The extraordinary structural design endows the printed ITO transistors with high device uniformity, outstanding electrical performance, and superior process efficiency. Furthermore, a 10 × 12 coffee-ring structure optoelectronic synaptic transistor array with a high spatial resolution (142 dpi) exhibits durable visual detection and memory behaviors. Meanwhile, an artificial neural network based on the coffee-ring structure synaptic transistors exhibits high accuracy in the recognition rate. These results promise the efficiency of the exceptional printing strategy in developing advanced optoelectronic synaptic transistors for artificial visual systems.

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“…In recent years, solution-based metal oxide thin-film transistors (TFTs) have garnered significant interest in academia and industry, especially for applications in large-area electronics, thanks to their compatibility with scalable fabrication techniques and their potential to replace their costly vacuum-based counterparts. − The last 20 years have witnessed numerous key developments toward solution-processed high-performance metal oxide thin-film transistors. − Among the developed solution-processable techniques, spray-coating stands out as a simple, scalable, and straightforward deposition technique that relies on inexpensive process equipment. Despite its promise for broader usage, spray-coating has been limited to semiconducting and dielectric materials with significantly less attention toward solution-processable conductors. − …”

Section: Introductionmentioning

confidence: 99%

Fully Sprayed Metal Oxide Transistors Utilizing Ti₃C₂T_x MXene Contacts

Yarali

El‐Demellawi

Faber

et al. 2023

ACS Appl. Electron. Mater.

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Printable large-area electronics continue to attract increasing interest from the scientific and industrial communities, owing to their potential for cost-efficient manufacturing. However, the exerted efforts primarily focus on processing semiconductors and dielectrics, with relatively limited attention toward printable electrode materials. In this respect, the family of two-dimensional (2D) transition metal carbides/nitrides, so-called MXenes, have emerged as promising electrode materials owing to their metal-like conductivity and solution processability. Despite their advantageous characteristics, however, to date, the application of MXene electrodes in the area of printed electronics has been marginally explored. Herein, we develop all-solution-processable In 2 O 3 /ZnO heterojunction metal oxide thin-film transistors (TFTs) utilizing Ti 3 C 2 T x MXene as the gate and the electron-injecting contacts, entirely spray-coated under ambient conditions. We show that the manufacturing of these fully spray-coated devices can be scaled-up to 4 in. substrates without compromising their operating characteristics. The fabricated TFTs exhibit electron mobility of 3 cm 2 V −1 s −1 with an on/off ratio of >10 4 . Our findings demonstrate the possibility of replacing conventional metal contacts with spray-coated MXene electrodes for application in large-area electronics.

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Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In₂O₃ Transistors

Cited by 24 publications

References 46 publications

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Fully Sprayed Metal Oxide Transistors Utilizing Ti₃C₂T_x MXene Contacts

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Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In2O3 Transistors

Cited by 24 publications

References 46 publications

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Fully Sprayed Metal Oxide Transistors Utilizing Ti3C2Tx MXene Contacts

Contact Info

Product

Resources

About

Quantum Confinement and Thickness‐Dependent Electron Transport in Solution‐Processed In₂O₃ Transistors

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation

Fully Sprayed Metal Oxide Transistors Utilizing Ti₃C₂T_x MXene Contacts