Quantum confinement effect on trilayer graphene nanoribbon carrier concentration

Rahmani, Meisam; Ismail, Razali; Ahmadi, Mohammad Taghi; Ghadiry, Mahdiar

doi:10.1080/17458080.2013.794309

Cited by 8 publications

(11 citation statements)

References 39 publications

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“…The comparison study between the presented model with data from [62,64] showed that due to the quantum confinement effect [39,43], the value of the subthreshold slope in the case of TGN SB FET is less than those of DG metal oxide semiconductor and vertical silicon-on-nothing FETs [62,64] for some values of drain-source voltage. A nanoelectronic device characterized by a steep subthreshold slope displays a faster transient between on-off states.…”

Section: Resultsmentioning

confidence: 99%

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

et al. 2013

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Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current–voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current–voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

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Section: Resultsmentioning

confidence: 99%

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

et al. 2013

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“…In this method, a self-consistent Hartree approximation can be utilized to estimate the induced charges on the different layers of BGN. This is because, as the Fermi surface of the intrinsic BGN communicates to the K-points, the tightbinding method is a suitable technique for the low energy excitations [23]. In addition, the tight-binding method with a single orbital per atom includes coupling parameters between the neighbor sites within BGN layers.…”

Section: Proposed Modelmentioning

confidence: 99%

“…In fact, the orbitals are considered to study the behavior of electrons around the Fermi level. The different sp 2 orbitals that are lower than the orbital in energy will have much more overlap with the orbitals of the same symmetry on adjacent atoms [23]. Furthermore, the interaction between the orbitals of adjacent atoms is small, which results in bonding and antibonding orbitals close to the Fermi level.…”

Section: Proposed Modelmentioning

confidence: 99%

“…Furthermore, the interaction between the orbitals of adjacent atoms is small, which results in bonding and antibonding orbitals close to the Fermi level. Therefore, the resulting bonding and antibonding molecular orbitals will recline below and above the Fermi level, respectively [23]. It is notable that the bonding and antibonding combinations are equal and communicate to orbitals which are limited to one of the two sublattices.…”

Section: Proposed Modelmentioning

confidence: 99%

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The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky‐Barrier Diode Performance

Rahmani

Ismail

Ahmadi

et al. 2013

Journal of Nanomaterials

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Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

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“…This delicate difference in stacking order leads to an exhibitive distinction in band structure and transport features. At the Dirac point, B-TGN becomes metallic, whereas r-TGN remains insulating with an inherent interaction-driven gap of 6 meV [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. In fact, ABA-stacked TGN shows semi-metallic behaviour with a tunable band overlap; however, ABC-stacked TGN with a tunable band gap is known as a semiconductor which is selected for the proposed sensor.…”

Section: Introductionmentioning

confidence: 99%

Effect of solution pH and adsorbent concentration on the sensing parameters of TGN‐based electrochemical sensor

Rahmani

Ghafoorifard

Afrang

et al. 2019

IET nanobiotechnol.

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The response of trilayer graphene nanoribbon (TGN)-based ion-sensitive field-effect transistor (ISFET) to different pH solutions and adsorption effect on the sensing parameters are analytically studied in this research. The authors propose a TGNbased sensor to electrochemically detect pH. To this end, absorption effect on the sensing area in the form of carrier concentration, carrier velocity, and conductance variations are investigated. Also, the caused electrical response on TGN as a detection element is analytically proposed, in which significant current decrease of the sensor is observed after exposure to high pH values. In order to verify the accuracy of the model, it is compared with recent reports on pH sensors. The TGN-based pH sensor exposes higher current compared to that of carbon nanotube (CNT) counterpart for analogous ambient conditions. While, the comparative results demonstrate that the conductance of proposed model is lower than that of monolayer graphenecounterpart for equivalent pH values. The results confirm that the conductance of the sensor is decreased and V g-min is obviously right-shifted by increasing value of pH. The authors demonstrate that although there is not the experimental evidence reported in the part of literature for TGN sensor, but the model can assist in comprehending experiments involving nanoscale pH sensors.

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Quantum confinement effect on trilayer graphene nanoribbon carrier concentration

Cited by 8 publications

References 39 publications

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky‐Barrier Diode Performance

Effect of solution pH and adsorbent concentration on the sensing parameters of TGN‐based electrochemical sensor

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