Quantum confinement in mixed phase silicon thin films grown by co-deposition plasma processing

Fields, Jeremy D.; McMurray, S. J.; Wienkes, Lee; Trask, J.; Anderson, C. A.; Miller, Paul L.; Simonds, Brian J.; Kakalios, J.; Kortshagen, Uwe R.; Lusk, Mark T.; Collins, R. T.; Taylor, P. C.

doi:10.1016/j.solmat.2013.10.028

Cited by 9 publications

(5 citation statements)

References 32 publications

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“…The authors investigated the electronic properties of these films as a function of the nanocrystalline silicon fraction and found that the dark conductivities of the films with 2–4% nanocrystals were enhanced by several orders of magnitude compared to films with much lower or much higher nanocrystal fractions. Fields et al studied films produced with the same hybrid synthesis approach. The authors showed that the photoluminescence peak intensity shifted to energies as high as 1.35 eV, higher than that expected from bulk silicon, and argued that this is due to quantum confinement in silicon nanocrystals embedded in a-Si:H film.…”

Section: Applicationsmentioning

confidence: 99%

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

et al. 2016

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Nonthermal plasmas have emerged as a viable synthesis technique for nanocrystal materials. Inherently solvent and ligand-free, nonthermal plasmas offer the ability to synthesize high purity nanocrystals of materials that require high synthesis temperatures. The nonequilibrium environment in nonthermal plasmas has a number of attractive attributes: energetic surface reactions selectively heat the nanoparticles to temperatures that can strongly exceed the gas temperature; charging of nanoparticles through plasma electrons reduces or eliminates nanoparticle agglomeration; and the large difference between the chemical potentials of the gaseous growth species and the species bound to the nanoparticle surfaces facilitates nanocrystal doping. This paper reviews the state of the art in nonthermal plasma synthesis of nanocrystals. It discusses the fundamentals of nanocrystal formation in plasmas, reviews practical implementations of plasma reactors, surveys the materials that have been produced with nonthermal plasmas and surface chemistries that have been developed, and provides an overview of applications of plasma-synthesized nanocrystals.

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Section: Applicationsmentioning

confidence: 99%

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

et al. 2016

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“…The origin of the broad PL spectrum of nc-Si:H is attributed to the size distribution and local fluctuations in matrix hydrogenation. In addition, the temperature dependence of this PL suggests that these nc-Si:H have fewer defects than those grown by conventional PECVD [60]. Based on the above results obtained from the previous studies, there is no clear cut evidence to explain the origin of PL.…”

Section: Resultsmentioning

confidence: 78%

“…The bands attributed to a-Si:H and nc-Si regions [59]. Very recently, the same authors have observed two PL peaks at 1.15 and 1.35 eV with co-deposited a/nc-Si:H by PECVD technique [60]. The origin of the broad PL spectrum of nc-Si:H is attributed to the size distribution and local fluctuations in matrix hydrogenation.…”

Section: Resultsmentioning

confidence: 91%

UV irradiation and H2 passivation processes to classify and distinguish the origin of luminescence from thin film of nc-Si deposited by PECVD technique

Ali

2015

Journal of Alloys and Compounds

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“…Beyond the basic science, this could have important tech nological applications for nanocrystalline multifunctional materials [14,15] and ultra thin silicon membranes [16] in which phonons are managed to better assist charge transport, control heat conduction, tune thermoelectric behavior [17], and modify localized phonon populations in order to slow the cooling of excited electrons and holes. This analysis is also relevant for coreshell silicon nanocrystals in which a super ficial layers can spontaneously amorphize due to superficial layers so inducing a confinement of such modes within the core.…”

Section: Introductionmentioning

confidence: 99%

Confinement of vibrational modes within crystalline lattices using thin amorphous layers

Bagolini

Mattoni

Lusk

2017

J. Phys.: Condens. Matter

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It is possible to confine vibrational modes to a crystal by encapsulating it within thin disordered layers with the same average properties as the crystal. This is not due to an impedance mismatch between materials but, rather, to higher order moments in the distribution of density and stiffness in the disordered phase-i.e. it is a result of material substructure. The concept is elucidated in an idealized one-dimensional setting and then demonstrated for a realistic nanocrystalline geometry. This offers the prospect of specifically engineering higher order property distributions as an alternate means of managing phonons.

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Quantum confinement in mixed phase silicon thin films grown by co-deposition plasma processing

Cited by 9 publications

References 32 publications

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications

UV irradiation and H2 passivation processes to classify and distinguish the origin of luminescence from thin film of nc-Si deposited by PECVD technique

Confinement of vibrational modes within crystalline lattices using thin amorphous layers

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