Quantum Dot Devices

Randall, John N.; Luscombe, James H.; Bate, R. T.

doi:10.1016/b978-0-12-234124-3.50018-5

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…Quantum dots (QD) is a perspective material for creation of optoelectronic and photovoltaic devices [1] [2] [3]. For such application the most effective way of their using is a creation of thin layer with incorporated QD [4].…”

Section: Introductionmentioning

confidence: 99%

The study of the formation of monolayers of quantum dots at different temperatures

Gorbachev

Goryacheva²,

Brezesinski

et al. 2016

SPIE Proceedings

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The process of formation of Langmuir monolayers of quantum dots at the different subphase temperatures was studied by means of compression isotherm, Brewster angle microscopy and transmission electron microscopy. The increasing of the maximum surface pressure from 32 to 44 mN/m takes place with decreasing the temperature from 34 to 11°C. This is due to a decrease in the rate of dissolution of surfactant molecules in water. The increasing of a filling degree of monolayer by the quantum dots and increasing of it uniformity in thickness takes place in this temperature range. The area of bilayer and multilayer film of quantum dots decreasing and the area of quantum dots monolayer is increasing. This change explained by the difference in the phase condition of oleic acid molecules, which stabilized quantum dots

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Section: Introductionmentioning

confidence: 99%

The study of the formation of monolayers of quantum dots at different temperatures

Gorbachev

Goryacheva²,

Brezesinski

et al. 2016

SPIE Proceedings

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show abstract

“…The precisely controlled fabrication of nanostructured semiconductors is strongly required to realize the great potential for application in different fields of electronics and optoelectronics. If the ring structures observed in the previous study 7,9) can be available for such applications as semiconductor quantum effect devices, 10) the annealing=cooling process in vacuum can be expected as a novel technique for the fabrication of nanostructured semiconductors. However, the ring structures are sometimes obscure and not always observed, in spite of applying the same experimental procedures.…”

mentioning

confidence: 95%

Ring structures formed inside voids in SiO₂ layer on Si(100) during thermal decomposition

Enta¹,

Osanai²,

Yoshida³

2016

Jpn. J. Appl. Phys.

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Ring structures inside voids in the SiO2 layer on a Si(100) substrate, which are concentrically formed by repeating thermal annealing in vacuum, have been investigated by scanning electron microscopy and atomic force microscopy. We demonstrate that slight exposure of the surface to volatile organic compounds during a cooling process significantly affects the formation of the ring structures. This result clearly shows that the key to ring-structure formation is surface adsorption of carbon atoms, which probably suppresses surface migration of silicon atoms. Our research provides a novel technique for the fabrication of nanostructured semiconductors for such applications as quantum effect devices.

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Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces

Reaves

Bressler‐Hill

Weinberg

et al. 1995

J. Electron. Mater.

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Quantum Dot Devices

Cited by 9 publications

References 28 publications

The study of the formation of monolayers of quantum dots at different temperatures

The study of the formation of monolayers of quantum dots at different temperatures

Ring structures formed inside voids in SiO₂ layer on Si(100) during thermal decomposition

Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces

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Quantum Dot Devices

Cited by 9 publications

References 28 publications

The study of the formation of monolayers of quantum dots at different temperatures

The study of the formation of monolayers of quantum dots at different temperatures

Ring structures formed inside voids in SiO2 layer on Si(100) during thermal decomposition

Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces

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Product

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About

Ring structures formed inside voids in SiO₂ layer on Si(100) during thermal decomposition