Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer

Wang, Di Yan; Wang, I-Sheng; Huang, I-Sheng; Yeh, Yun-Chieh; Li, Shao Sian; Tu, Kun-Hua; Chen, Chia Chun; Chen, Chun-Wei

doi:10.1021/jp210062x

Cited by 31 publications

(27 citation statements)

References 25 publications

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“…The optimized thickness of 3 nm for high conductivity is thought to be reasonable according to other literatures. [4a,13]…”

Section: Resultsmentioning

confidence: 99%

“…However, the PEDOT:PSS with acidic and hygroscopic features has been known to degrade or etch other adjacent ITO, organic, and inorganic layers, which consequently deteriorates the electrical and electroluminescent (EL) performances of the QD‐LEDs. To avoid this problem, the use of a few conductive inorganic or organic layers (e.g., polystyrene– N , N ′‐diphenyl‐ N , N ′‐bis(4‐ n ‐butylphenyl)‐(1,1′‐biphenyl)–4,4′‐diamine‐perfluorocyclobutane, graphene oxide (GO), MoO x , CuO, WO x , and SnO 2 nanoparticles, NPs) has been attempted as a surrogate and has demonstrated high‐efficiency QD‐LEDs …”

Section: Introductionmentioning

confidence: 99%

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Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Park

Choi

Kim

et al. 2017

Adv Materials Inter

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This study investigates the effect of graphene oxide (GO) interlayer on electrical and electroluminescent (EL) performances of quantum‐dot light emitting diodes (QD‐LEDs) with poly(N‐vinylcarbazole, PVK)/V2O5–x hole transport layers. The control QD‐LEDs basically consist of multilayer heterojunctions of hole transport/injection PVK/V2O5–x bilayers, QD light emission layer, and electron transport ZnO nanoparticle layer, all of which are sequentially spin coated on indium‐tin‐oxide/glass substrates. The QD‐LEDs with GO interlayer inserted between PVK and V2O5–x present superior electrical rectification and EL efficiency than those without GO interlayer. The hole‐only devices with GO interlayer evidence higher hole conduction capability than those without GO by an order of magnitude. From ultraviolet photoelectron spectroscopy analysis, the hole transport enhancement in PVK/GO/V2O5–x heterojunctions is found to be responsible for reduced height of the highest hole barrier at QD/PVK interface from 1.74 to 0.75 eV by means of downshift of energy levels of PVK. Such energy level variation of PVK is discussed in terms of heterointerfacial orbital hybridization at PVK/V2O5–x, which are validated by diverse spectroscopies. The ability of GO interlayer to shift the PVK energy levels can be exploited for developing high‐performance optoelectronics and electronics with hole transport organic/transition metal oxide heterojunctions.

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“…The optimized thickness of 3 nm for high conductivity is thought to be reasonable according to other literatures. [4a,13]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Park

Choi

Kim

et al. 2017

Adv Materials Inter

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show abstract

“…The device parameters of QLEDs based on 2D materials were summarized in Table 3. Wang reported QLEDs with the structure of ITO/GO/QDs/TPBi/LiF/Al utilizing GO HTL, as shown in Figure 6a [58]. A maximum luminance of 165 cd/m 2 was found in the QLED device consisting of the 2 ML QDs EML and 2 nm GO HTL.…”

Section: Two-dimensional Materials In Quantum Dot Light Emitting Diodmentioning

confidence: 99%

“…2D materials are promising candidates to replace or modify PEDOT:PSS. In QLEDs, 2D materials have been introduced as HTL, HIL and dopant in composite HIL/HTL to enhance the performance of devices [58][59][60][61]. Figure 5 shows some related structures of QLED devices based on 2D materials.…”

Section: Two-dimensional Materials In Quantum Dot Light Emitting Diodmentioning

confidence: 99%

Improved Charge Injection and Transport of Light-Emitting Diodes Based on Two-Dimensional Materials

et al. 2019

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Light-emitting diodes (LEDs) are considered to be the most promising energy-saving technology for future lighting and display. Two-dimensional (2D) materials, a class of materials comprised of monolayer or few layers of atoms (or unit cells), have attracted much attention in recent years, due to their unique physical and chemical properties. Here, we summarize the recent advances on the applications of 2D materials for improving the performance of LEDs, including organic light emitting diodes (OLEDs), quantum dot light emitting diodes (QLEDs) and perovskite light emitting diodes (PeLEDs), using organic films, quantum dots and perovskite films as emission layers (EMLs), respectively. Two dimensional materials, including graphene and its derivatives and transition metal dichalcogenides (TMDs), can be employed as interlayers and dopant in composite functional layers for high-efficiency LEDs, suggesting the extensive application in LEDs. The functions of 2D materials used in LEDs include the improved work function, effective electron blocking, suppressed exciton quenching and reduced surface roughness. The potential application of 2D materials in PeLEDs is also presented and analyzed.

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“…As for QD-LEDs, metal oxides such as NiO, WO 3 and ZTO (alloyed ZnO and SnO 2 ) have been used as the HTL to fabricate high-performance QD-LEDs without using PEDOT:PSS [22][23][24][25], but these are still not solutionprocessable. Wang et al [26] utilized solution-processable grapheme oxide thin film (GO) as the anode interfacial layer in QD-LED. GO thin films, which act as the electron blocking and HTL in the devices, have demonstrated the advantage of being compatible with fully solution-processed fabrication; however, the device performance (luminance of 165 cd m −2 at current density of 232 mA cm −2 , operated at an applied voltage of 8 V) is far from what we need.…”

Section: Introductionmentioning

confidence: 99%

Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

Wang

et al. 2013

Nanotechnology

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Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoOx) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoOx as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoOx anode buffer layer. The QD-LEDs with a MoOx anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m(-2) and 0.67 cd A(-1) for the yellow emission at 580 nm, and 7842 cd m(-2) and 1.49 cd A(-1) for the red emission at 610 nm, respectively.

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Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer

Cited by 31 publications

References 25 publications

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Improved Charge Injection and Transport of Light-Emitting Diodes Based on Two-Dimensional Materials

Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer

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