Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

Abstract

A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based gain region is demonstrated. The pumping scheme employs a 90° off-axis parabolic mirror to focus the diode laser pump beam to a nearly circular pump spot. With this pump arrangement, the QD MECSEL with SiC heat spreaders produced 320 mW output power at room temperature with direct emission in the near-infrared at 1.5 μm. We report a record value of 86 nm for the tuning range at this wavelength region, owing to a broad QD gain bandwidth and wide tunability in MECSELs.

Thermal Behavior and Power Scaling Potential of Membrane External-Cavity Surface-Emitting Lasers (MECSELs)

“…The quantum defect differs by 1.7 percentage points only and the higher thermal conductivity of AlGaAs of ∼ 12 W/m•K can make a slight difference to the heat situation within the gain membrane [29]. On the other hand, the thermal resistances of the = 760 nm AlGaAs, sapphire-cooled MECSEL [28], the = 1.5 µm InAs/InP QD SiC-cooled MECSEL [6], and the = 1.77 µm InGaAlAs/InP diamond-cooled MECSEL [5] are in good agreement with the simulations. Although the thermal conductivities of the MECSELs included in Fig.…”

“…The membrane external-cavity surface-emitting laser (MEC-SEL) architecture has recently emerged [1]- [3] to further expand the versatility of the larger class of semiconductor disk laser technology [4]- [6]. Similar to a vertical-externalcavity surface-emitting laser (VECSEL) architecture [7], the gain region in a MECSEL is made of a quantum well (QW) or quantum dot (QD) heterostructure, separated by barriers and grouped into several packages.…”

Recent Advances in Light Detection and Ranging: Optical Modulation Solutions and Novel Nanotechnologies

“…The device exhibited an output power of 320 mW at ambient temperatures. [80] One of the advantages of VCSELs is that they are easier to integrate with driving circuits due to their surface-emitting performance. By optimizing the design of the driving circuit [81] and improving the performance of the laser devices, and then integrating the two together, the performance of LiDAR can be further improved.…”

“…Recently, several teams have started to develop the integration of PCSELs and LiDAR-related modules. Y. H. Hong et al first switching speed -fully integrated GaN driver [81] GaN HEMT driving circuit [97] hetero integration [65] circuit design [83] high power triple junction laser [68] tapered ridge waveguide lasers with highly asymmetric design [71] tapered diode laser amplifiers [72] multi-junction VCSEL [64] flip-chip design [73] shallow surface gratings [74][75][76] driver and circuit design [82] square-lattice structure [ 88,89,93] MOCVD regrowth [92] double-lattice structure [ 66,94,95] eye safety long wavelength [70][71][72] long-wavelength [78][79][80] buried airhole/InP photonic-crystal (PC) layer [96] chip on scale -integration [100][101][102] A composite photonic crystal structure resulting from combining both square and rectangular lattices [90] CMOS-fabricated SPAD array [98] stability -laser design with high-temperature operation [77] The photonic crystal exhibiting a flat band structure, accompanied by an additional feedback mechanism [ 103] power consumption -circuit design [83] The photonic crystal exhibiting a flat band structure, accompanied by an additional feedback mechanism [ 103] suggested a framework for influencing the light emission performance of PCSELs using a GaN high electron mobility transistor (HEMT) driving circuit. For LiDAR sensing, a quicker pulse repetition frequency paired with a narrower pulse wid...…”

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

“…This feature has been already exploited in MECSELs operating at the short red wavelengths, i.e. 660 nm [2] as well as long infrared wavelengths near 1.5 µm to 1.7 µm spectral range [9],…”