Quantum dot microcavity lasers on silicon substrates

Wan, Yating; Norman, Justin; Bowers, John E.

doi:10.1016/bs.semsem.2019.05.002

Cited by 8 publications

(3 citation statements)

References 123 publications

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“…Recent progress in both heterogeneous and monolithic III-Von-Si integration provide new opportunities to these compact light sources [44]- [47]. Convenience to integrate with low-loss bus waveguide and other Si photonic integrated circuits (PICs) is a huge advantage in heterogeneous platform [33], [48], [49].…”

Section: Microring Laser Designmentioning

confidence: 99%

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Liang

Roshan-Zamir

Fan

et al. 2020

J. Lightwave Technol.

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Optical connectivity, which has been widely deployed in today's datacenters and high-performance computing (HPC) systems, is a disruptive technological revolution to the IT industry in the new Millennium. In our journey to debut an Exascale supercomputer, a completely new computing concept, called memorydriven computing, was innovated recently. This new computing architecture brings challenges and opportunities for novel optical interconnect solutions. Here, we first discuss our strategy to develop appropriate optical link solutions for different data traffic scenarios in memory-driven HPCs. Then, we present detailed review on recent work to demonstrate fully photonics-electronicsintegrated single-and multi-wavelength directly modulated laser (DML) transmitters on silicon for the first time. Compact heterogeneous microring lasers and laser arrays were fabricated as photonic engines to work with a customized complementary metal-oxide semiconductor (CMOS) driver circuit. Microring lasers based on conventional quantum well and new quantum dot lasing medium were compared in the experiment. Thermal shunt and MOS capacitor structures were integrated into the lasers for effective thermal management and ultra low-energy tuning. It enables a

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Section: Microring Laser Designmentioning

confidence: 99%

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Liang

Roshan-Zamir

Fan

et al. 2020

J. Lightwave Technol.

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“…Appl., Vol. 54, 3, (2021) OEID are semiconductor instruments that can detect infrared radiation of various wavelengths during the manufacturing process [20].OEID shave has been implemented successfully using mainly GaAs, InGaAs, and SiGe for mid-wave and long-wave infrared (IR) [21][22][23][24][25]. Besides, OEIDs are used for large infrared imaging system focal plane arrays.…”

Section: Introductionmentioning

confidence: 99%

Contrast Transfer Characteristics of Integrated Images Based on Optoelectronic Integration between Quantum Well Photodetector and Light Emitting Diod

Tokhy

Emarah

Fikry

2021

Arab Journal of Nuclear Sciences and Applications

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The present study is concerned with overcoming the resultant image degradation due to the integration of the optoelectronics instruments (OEIDs). Accordingly, the characteristics of the image, due to optoelectronic integration, are handled and improved. The image features include the transmission mechanism and the concentration of electrons. The device performance is improved through the optimal design of the basic parameters. Furthermore, the efficient design of structure parameters will minimize the reabsorption process. Optimization of the integrator structure is realized. MATLAB environment is used for devising this instrument. The optimal number of integrator base and wave number characterizing the scale of near-infrared (NIR) image nonuniformity are estimated to be 13 and 0.206 respectively. The output of this instrument is also conducted through closed-form expressions of the underlined instrument. The achieved results show a remarkable accuracy for handling the deformations raised during the integration process. In addition, the results show that the carrier concentration changes the behavior of the output of the NIR image.

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“…Besides the defect insensitivity, , QDs have numerous performance advantages over QWs, including lower threshold current, higher temperature operation, a near zero line width enhancement factor and, thus, isolator-free stability, ultrafast gain recovery, and enhanced four-wave mixing. Exciting technological advances have been made in the field of epitaxially grown QD devices on Si, as described in several previous review articles, summarizing the evolution of device performance, and efforts in developing CMOS compatible epitaxial platform on (001) Si. ,− …”

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confidence: 99%

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

et al. 2021

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Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs show greatly improved tolerance to defects and promise other advantages such as low transparency current density, high temperature operation, isolator-free operation, and enhanced four-wave-mixing. These material properties distinguish them from traditional III–V/Si quantum wells (QWs) and have spawned intense interest to explore a full set of photonic integration using epitaxial growth technology. We present here a summary of the most recent developments of QD lasers grown on a CMOS-compatible (001) Si substrate, with a focus on breakthroughs in long lifetime at elevated temperatures. Threading dislocations are significantly reduced to the level of 1 × 106 cm–2 via a novel asymmetric step-graded filter. Misfit dislocations are efficiently blocked from the QD region through well-engineered trapping layers. A record-breaking extrapolated lifetime of more than 200000 hours has been achieved at 80 °C, forecasting that device reliability is now entering the realm of commercial relevance and a monolithically integrated light source is finally on the horizon.

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Quantum dot microcavity lasers on silicon substrates

Cited by 8 publications

References 123 publications

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Fully-Integrated Heterogeneous DML Transmitters for High-Performance Computing

Contrast Transfer Characteristics of Integrated Images Based on Optoelectronic Integration between Quantum Well Photodetector and Light Emitting Diod

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

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