2013
DOI: 10.1080/09500340.2013.794392
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Quantum-dot semiconductor optical amplifier performance management under optical injection

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Cited by 4 publications
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“…There are other effects that can also be harnessed in the quest for ultimate speed. To improve pure carrier recovery these include doping to reduce the carrier lifetime in the bulk/feeding zones, exploiting tunnelling effects in QW and QD structures [91], the use of pulsed or CW optical holding/reset beams [86,107,108], and increasing the energy gap of QDs to the wetting layer [97] amongst others. Exactly how far the intrinsic recovery time can be pushed is not yet clear, but modelling has shown that speeds of 1TB/s appear possible in some devices [93].…”
Section: Carrier Induced Switching Speed Limitationsmentioning
confidence: 99%
“…There are other effects that can also be harnessed in the quest for ultimate speed. To improve pure carrier recovery these include doping to reduce the carrier lifetime in the bulk/feeding zones, exploiting tunnelling effects in QW and QD structures [91], the use of pulsed or CW optical holding/reset beams [86,107,108], and increasing the energy gap of QDs to the wetting layer [97] amongst others. Exactly how far the intrinsic recovery time can be pushed is not yet clear, but modelling has shown that speeds of 1TB/s appear possible in some devices [93].…”
Section: Carrier Induced Switching Speed Limitationsmentioning
confidence: 99%