Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

“…Considering that the MEE method for QD growth typically results in larger QDs, which are more uniform and sparser, detailed study is necessary for this topic. At this point, it should be pointed out that the MEE effect on the Sb/As interface may be different from that on the As/As interface in InAs/GaAs [7]. A surfactant effect of Sb also explains this [10].…”

“…Studies of quantum structures with various combinations of narrow-gap 3-5 materials based on antimony have recently been reported [5][6][7][8]. Typically, most of these quantum structures were grown on substrates such as InAs, InP, and GaSb due to the lattice match with matrix materials [6][7][8].…”

“…Typically, most of these quantum structures were grown on substrates such as InAs, InP, and GaSb due to the lattice match with matrix materials [6][7][8]. Although GaAs substrate based type-2 quantum structures (InAsSb QDs on GaAs) were reported by J.…”

“…Even though Q-dash-like structures exist in the InAsSb matrix, the shapes of the Q-dashes on the top layer, indicated in the red circle of figure 5 (b), are not the same as those of Q-dash-like structures in the matrix (indicated by a white circle in figure 5 (b)). Especially in antimony based materials, since the In-As bond is stronger than the In-Sb bond, the As-Sb exchange might be activated during growth of the multi-stacked layer [7]. The missing Sb atoms from the Q-dashes to the InAsSb layers may lead to a reduction of the volume and the formation of threading dislocations.…”